Lateral charge transport in the nitride layer of the NROM non-volatile memory device

Microelectronic Engineering - Tập 72 - Trang 426-433 - 2004
Assaf Shappir1, Yosi Shacham-Diamand1, Eli Lusky2, Ilan Bloom2, Boaz Eitan2
1Department of Physical Electronics, Research Institute for Nano-Science and Nano-Technology, Tel Aviv University, Ramat Aviv 69978, Israel
2Saifun Semiconductors Ltd., 45 Hamelacha St., Ind. Zone South, P.O. Box 8385, Netanya, Israel

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