Large-area, liftoff nanoporous GaN distributed Bragg reflectors: Fabrication and application
Tài liệu tham khảo
Yang, 1995, Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation, Electron. Lett., 31, 886, 10.1049/el:19950610
Huang, 2006, Crack-free GaN/AlN GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN GaN/AlN superlattices grown by metalorganic chemical vapor deposition, Appl. Phys. Lett., 88
Dorsaz, 2005, Progress in AlInN–GaN Bragg reflectors: application to a microcavity light emitting diode, J. Appl. Phys., 97, 10.1063/1.1872197
Altoukhov, 2009, Pseudoelasticity of Cu–Zr nanowires via stress-induced martensitic phase transformations, Appl. Phys. Lett., 95
Chen, 2012, High reflectance membrane-based distributed Bragg reflectors for GaN photonics, Appl. Phys. Lett., 101, 10.1063/1.4768806
Wang, 2017, GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector, Appl. Phys. Exp., 10, 10.7567/APEX.10.122102
Shiu, 2016, InGaN light-emitting diodes with an embedded nanoporous GaN distributed Bragg reflectors, Sci. Rep., 6, 10.1038/srep29138
Zhang, 2015, Mesoporous GaN for photonic engineering-highly reflective GaN mirrors as an example, ACS Photon., 2, 980, 10.1021/acsphotonics.5b00216
Mishkat-Ul-Masabih, 2018, Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN, Appl. Phys. Lett., 112, 10.1063/1.5016083
Chen, 2017, High-Q, low-threshold monolithic perovskite thin-film vertical-cavity lasers, Adv. Mater., 29, 1604781, 10.1002/adma.201604781
Cao, 2017, Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers, Nanoscale, 9, 11504, 10.1039/C7NR03622A
Cui, 2015, Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy, J. Alloys Compd., 626, 154, 10.1016/j.jallcom.2014.11.149
Zhang, 2012, A lift-off process of GaN layers and devices through nanoporous transformation, Appl. Phys. Lett., 100, 10.1063/1.4711218
Jang, 2014, Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings, ACS Appl. Mater. Inter., 6, 985, 10.1021/am404285s
Chen, 2012, Nanopores in GaN by electrochemical anodization in hydrofluoric acid: formation and mechanism, J. Appl. Phys., 112
Han, 1997, The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition, Appl. Phys. Lett., 71, 3114, 10.1063/1.120263
El-Nahass, 2010, Structural and optical properties of tris(8-hydroxyquinoline) aluminum (III)(Alq3) thermal evaporated thin films, J. Alloys Compd., 507, 112, 10.1016/j.jallcom.2010.07.110
Kim, 2001, Characterization and luminescence properties of Alq3 films grown by ionized-cluster-beam deposition, neutral-cluster-beam deposition and thermal evaporation, Thin Solid Films, 398-399, 78, 10.1016/S0040-6090(01)01306-2
Gavrilko, 2004, FTIR spectroscopic and STM studies of vacuum deposited aluminium (III) 8-hydroxyquinoline thin films, J. Mol. Struct., 704, 163, 10.1016/j.molstruc.2004.01.068
Zhang, 2010, A conductivity-based selective etching for next generation GaN devices, Phys. Status Solidi B, 247, 1713, 10.1002/pssb.200983650
Schwab, 2013, Aligned mesopore arrays in GaN by anodic etching and photoelectrochemcial surface etching, J. Phys. Chem. C, 117, 16890, 10.1021/jp401890d
Yang, 2018, Fabrication, annealing, and regrowth of wafer-scale nanoporous GaN distributed Bragg reflectors, Scr. Mater., 156, 10, 10.1016/j.scriptamat.2018.06.040
Zhu, 2017, Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification, Sci. Rep., 7
Lynch, 2013, Propagation of nanopores during anodic etching of n-InP in KOH, Phys. Chem. Chem. Phys., 15, 15135, 10.1039/c3cp52253a
Schmuki, 1999, Predefined initiation of porous GaAs using focused ion beam surface sensitization, J. Electrochem. Soc., 146, 735, 10.1149/1.1391672
Zhao, 2019, Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers, J. Alloys Compd., 789, 658, 10.1016/j.jallcom.2019.03.036
Zhang, 2011, The fabrication of large-area, free-standing GaN by a novel nanoetching process, Nanotechnology, 22
Zhang, 2011, Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth, J. Cryst. Growth, 334, 62, 10.1016/j.jcrysgro.2011.08.035
Qiu, 2007, Synthesis of nanocrystalline GaN by the sol–gel method, Mater. Sci. Eng. B, 136, 33, 10.1016/j.mseb.2006.08.062
Xiao, 2008, Thermal stability of GaN powders investigated by XRD, XPS, PL, TEM, and FT-IR, J. Alloys Compd., 465, 340, 10.1016/j.jallcom.2007.10.084
Xu, 2015, Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light, AIP Adv., 5, 10.1063/1.4922510
Shin, 2007, Enhanced energy transfer within PVK/Alq3 polymer nanowires induced by the interface effect of nanochannels in porous alumina membrane, J. Phys. Chem. C, 111, 15391, 10.1021/jp074203m
Li, 2006, Blue-shifting photoluminescence of tris (8-hydroxyquinoline) aluminium encapsulated in the channel of functionalized mesoporous silica SBA-15, Mater. Chem. Phys., 100, 128, 10.1016/j.matchemphys.2005.12.020
