Large-area, liftoff nanoporous GaN distributed Bragg reflectors: Fabrication and application

Applied Surface Science - Tập 489 - Trang 849-855 - 2019
Xiaokun Yang1, Zhen Chen1, Dezhong Cao2, Chongchong Zhao1, Lvyang Shen1, Caina Luan1, Zhiyong Pang1, Jianqiang Liu3, Jin Ma1, Hongdi Xiao1
1School of Microelectronics, Shandong University, Jinan, 250100, China
2School of Science, Xi’an Polytechnic University, Xi’an 710048, China
3School of Physics, Shandong University, Jinan 250100, China

Tài liệu tham khảo

Yang, 1995, Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation, Electron. Lett., 31, 886, 10.1049/el:19950610 Huang, 2006, Crack-free GaN/AlN GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN GaN/AlN superlattices grown by metalorganic chemical vapor deposition, Appl. Phys. Lett., 88 Dorsaz, 2005, Progress in AlInN–GaN Bragg reflectors: application to a microcavity light emitting diode, J. Appl. Phys., 97, 10.1063/1.1872197 Altoukhov, 2009, Pseudoelasticity of Cu–Zr nanowires via stress-induced martensitic phase transformations, Appl. Phys. Lett., 95 Chen, 2012, High reflectance membrane-based distributed Bragg reflectors for GaN photonics, Appl. Phys. Lett., 101, 10.1063/1.4768806 Wang, 2017, GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector, Appl. Phys. Exp., 10, 10.7567/APEX.10.122102 Shiu, 2016, InGaN light-emitting diodes with an embedded nanoporous GaN distributed Bragg reflectors, Sci. Rep., 6, 10.1038/srep29138 Zhang, 2015, Mesoporous GaN for photonic engineering-highly reflective GaN mirrors as an example, ACS Photon., 2, 980, 10.1021/acsphotonics.5b00216 Mishkat-Ul-Masabih, 2018, Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN, Appl. Phys. Lett., 112, 10.1063/1.5016083 Chen, 2017, High-Q, low-threshold monolithic perovskite thin-film vertical-cavity lasers, Adv. Mater., 29, 1604781, 10.1002/adma.201604781 Cao, 2017, Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers, Nanoscale, 9, 11504, 10.1039/C7NR03622A Cui, 2015, Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy, J. Alloys Compd., 626, 154, 10.1016/j.jallcom.2014.11.149 Zhang, 2012, A lift-off process of GaN layers and devices through nanoporous transformation, Appl. Phys. Lett., 100, 10.1063/1.4711218 Jang, 2014, Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings, ACS Appl. Mater. Inter., 6, 985, 10.1021/am404285s Chen, 2012, Nanopores in GaN by electrochemical anodization in hydrofluoric acid: formation and mechanism, J. Appl. Phys., 112 Han, 1997, The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition, Appl. Phys. Lett., 71, 3114, 10.1063/1.120263 El-Nahass, 2010, Structural and optical properties of tris(8-hydroxyquinoline) aluminum (III)(Alq3) thermal evaporated thin films, J. Alloys Compd., 507, 112, 10.1016/j.jallcom.2010.07.110 Kim, 2001, Characterization and luminescence properties of Alq3 films grown by ionized-cluster-beam deposition, neutral-cluster-beam deposition and thermal evaporation, Thin Solid Films, 398-399, 78, 10.1016/S0040-6090(01)01306-2 Gavrilko, 2004, FTIR spectroscopic and STM studies of vacuum deposited aluminium (III) 8-hydroxyquinoline thin films, J. Mol. Struct., 704, 163, 10.1016/j.molstruc.2004.01.068 Zhang, 2010, A conductivity-based selective etching for next generation GaN devices, Phys. Status Solidi B, 247, 1713, 10.1002/pssb.200983650 Schwab, 2013, Aligned mesopore arrays in GaN by anodic etching and photoelectrochemcial surface etching, J. Phys. Chem. C, 117, 16890, 10.1021/jp401890d Yang, 2018, Fabrication, annealing, and regrowth of wafer-scale nanoporous GaN distributed Bragg reflectors, Scr. Mater., 156, 10, 10.1016/j.scriptamat.2018.06.040 Zhu, 2017, Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification, Sci. Rep., 7 Lynch, 2013, Propagation of nanopores during anodic etching of n-InP in KOH, Phys. Chem. Chem. Phys., 15, 15135, 10.1039/c3cp52253a Schmuki, 1999, Predefined initiation of porous GaAs using focused ion beam surface sensitization, J. Electrochem. Soc., 146, 735, 10.1149/1.1391672 Zhao, 2019, Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers, J. Alloys Compd., 789, 658, 10.1016/j.jallcom.2019.03.036 Zhang, 2011, The fabrication of large-area, free-standing GaN by a novel nanoetching process, Nanotechnology, 22 Zhang, 2011, Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth, J. Cryst. Growth, 334, 62, 10.1016/j.jcrysgro.2011.08.035 Qiu, 2007, Synthesis of nanocrystalline GaN by the sol–gel method, Mater. Sci. Eng. B, 136, 33, 10.1016/j.mseb.2006.08.062 Xiao, 2008, Thermal stability of GaN powders investigated by XRD, XPS, PL, TEM, and FT-IR, J. Alloys Compd., 465, 340, 10.1016/j.jallcom.2007.10.084 Xu, 2015, Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light, AIP Adv., 5, 10.1063/1.4922510 Shin, 2007, Enhanced energy transfer within PVK/Alq3 polymer nanowires induced by the interface effect of nanochannels in porous alumina membrane, J. Phys. Chem. C, 111, 15391, 10.1021/jp074203m Li, 2006, Blue-shifting photoluminescence of tris (8-hydroxyquinoline) aluminium encapsulated in the channel of functionalized mesoporous silica SBA-15, Mater. Chem. Phys., 100, 128, 10.1016/j.matchemphys.2005.12.020