Ion-sensing devices with silicon nitride and borosilicate glass insulators

IEEE Transactions on Electron Devices - Tập 34 Số 8 - Trang 1700-1707 - 1987
D.L. Harame1, Luc Bousse2, J. Shott2, J.D. Meindl3
1IBM Thomas J. Watson Research Center Yorktown Heights, NY#TAB#
2Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
3[Rensselaer Polytechnic Institute, Troy, NY, USA, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA]

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