Ion Beam Deposition of Epitaxial Silicon Films

Silicon films of thicknesses (100 - 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 - 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.