Investigation of the process of voltage distribution over elements of a high-power semiconductor current interrupter

The process of voltage distribution over serially connected elements of a high-power semiconductor current interrupter in the stage of current breakage is studied within the framework of a previously developed physicomathematical model. It is established that a mechanism is operative that provides for the voltage drop leveling between unit structures of the p +-p-n-n + type with various depths X p of the p-n junctions. The mechanism is related to the fact that the formation of a strong field region on the stage of current breakage in the unit structures with larger X p begins later, but the expansion of this region proceeds faster than the same processes in the units with smaller X p .