Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

Materials Science and Engineering B: Solid-State Materials for Advanced Technology - Tập 61 - Trang 239-243 - 1999
A Galeckas1,2, J Linnros1, M Frischholz3,4, K Rottner3,4, N Nordell4, S Karlsson4, V Grivickas2
1Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden
2Institute of Material Research and Applied Sciences, Vilnius University, Sauletekio 10, LT-2054 Vilnius, Lithuania
3ABB Corporate Research, 72178 Västerås, Sweden
4Industrial Microelectronics Center, P.O. Box 1084, S-16421 Kista, Sweden

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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Tập 61

239-243

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