Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

A Galeckas1,2, J Linnros1, M Frischholz3,4, K Rottner3,4, N Nordell4, S Karlsson4, V Grivickas2
1Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden
2Institute of Material Research and Applied Sciences, Vilnius University, Sauletekio 10, LT-2054 Vilnius, Lithuania
3ABB Corporate Research, 72178 Västerås, Sweden
4Industrial Microelectronics Center, P.O. Box 1084, S-16421 Kista, Sweden

Tài liệu tham khảo

W. Zhou, I. Khlebnikov, T.S. Sudarshan, M.A. Capano, W.C. Mitchel, Proceedings of the International Conference on Silicon Carbide, III-nitrides and Related Materials, Stockholm, 1997, p. 525. V. Grivickas, J. Linnros, A. Galeckas, Proceedings of the International Conference on Silicon Carbide, III-nitrides and Related Materials, Stockholm, 1997, p. 529. G. Pensl, H. Morkoç, B. Monemar, E. Janzén (Eds.), Proceedings of the Seventh International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, 1997 (Mat. Sci. Forum, vols. 264–268, 1998, p. 1606, 2-Vol. Set). del Alamo, 1985, Sol. State Elec., 28, 47, 10.1016/0038-1101(85)90209-6 A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelt, C. Hallin, Proceedings of the International Conference on Physics of Semiconductors, ICPS ’24, Jerusalem, Tu-177, 1998. Kordina, 1996, Appl. Phys. Lett., 69, 697 Galeckas, 1997, Appl. Phys. Lett., 71, 3269, 10.1063/1.120309 Schaffer, 1994, MRS Sym. Proc., 339, 595, 10.1557/PROC-339-595 Larkin, 1994, Inst. Phys. Conf. Ser., 137, 51