Nghiên cứu các tính chất điện và điện môi của cấu trúc Au/n-GaAs/p-Si/Al được phát triển bằng phương pháp lắng đọng pha lỏng

Akkal, B., Benamara, Z., Bideux, L., Gruzza, B.: Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures. Microelectron. J. 30, 673–678 (1999) Akkal, B., Benamara, Z., Gruzza, B., Bideux, L.: Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency. Vacuum 57, 219–228 (2000) Altındal, Ş., Dökme, İ., Bülbül, M.M., Yalçın, N., Serin, T.: The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range. Microelectron. Eng. 83, 499–505 (2006) Arpapay, B., Duygulu, Ö., Serincan, U.: Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy. Mater. Sci. Semicond. Process. 111, 104990 (2020) Arslan, E., Şafak, Y., Taşçıoğlu, İ., Uslu, H., Özbay, E.: Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures. Microelectron. Eng. 87, 1997–2001 (2010) Ashery, A., Farag, A.A.M., Mahani, R.: Structural, electrical and magnetic characterizations of Ni/Cu/p-Si Schottky diodes prepared by liquid phase epitaxy. Microelectron. Eng. 87, 2218–2224 (2010) Ashery, A., Elnasharty, M.M., Farag, A., Salem, M., Nasralla, N.: Electrical performance and photosensitive properties of Cu/SiO2/Si–MOS based junction prepared by liquid phase epitaxy. Superlattices Microstruct. 109, 662–674 (2017) Ashok, S., Borrego, J.M., Gutmann, R.J.: Electrical characteristics of GaAs MIS Schottky diodes. Solid State Electron. 22, 621–631 (1979) Bengi, S., Bülbül, M.M.: Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures. Curr. Appl. Phys. 13, 1819–1825 (2013) Biber, M.: Low-temperature current–voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes. Phys. B 325, 138–148 (2003) Card, H.C., Rhoderick, E.H.: Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D Appl. Phys. 4, 1589–1601 (1971) Chand, S., Kumar, J.: Evidence for the double distribution of barrier heights in Schottky diodes fromI-V-Tmeasurements. Semicond. Sci. Technol. 11, 1203–1208 (1996) Chand, S., Kumar, J.: Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes. Appl. Phys. A 65, 497–503 (1997) Chattopadhyay, P., Daw, A.N.: On the current transport mechanism in a metal–insulator–semiconductor (MIS) diode. Solid State Electron. 29, 555–560 (1986) Chattopadhyay, P., RayChaudhuri, B.: Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes. Solid State Electron. 36, 605–610 (1993) Cova, P., Singh, A.: Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes. Solid State Electron. 33, 11–19 (1990) Demircioglu, Ö., Karataş, Ş., Yıldırım, N., Bakkaloglu, Ö.: Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au–Sb Schottky structures. Microelectron. Eng. 88, 2997–3002 (2011) Doğan, H., Yıldırım, N., Orak, İ., Elagöz, S., Turut, A.: Capacitance–conductance–frequency characteristics of Au/Ni/n-GaN/undoped GaN structures. Phys. B 457, 48–53 (2015) El Radaf, I.M., Hameed, T.A., Yahia, I.S.: Synthesis and characterization of F-doped CdS thin films by spray pyrolysis for photovoltaic applications. Mater. Res. Express 5, 066416 (2018) El-Menyawy, E.M., Ashery, A.: Current–voltage characteristics and inhomogeneous barrier height analysis of Au/poly(o-toluidine)/p-Si/Al heterojunction diode. J. Mater. Sci.: Mater. Electron. 25, 3939–3946 (2014) Farag, A.A.M.: Influence of temperature and illumination on the characteristics of nanocrystalline Ga029 Al071As based heterojunction prepared by MOCVD. J. Alloys Compd. 509, 8056–8064 (2011) Farag, A.A.M., Mahmoud, G.M., Terra, F.S., Ashery, A., El-Nahass, M.M.: Multi-tunneling mechanism in n-InSb/p-Si heterojunctions. Phys. Low Dimens. Struct. 5, 1–17 (2004) Ghosh, A.K., Feng, T., Haberman, J.I., Maruska, H.P.: Effects of interfacial charge on the electron affinity, work function, and electrical characteristics of thinly oxidized semiconductor-insulator-semiconductor and metal-insulator-semiconductor devices. J. Appl. Phys. 55, 2990–2994 (1984) Gould, R.: Structure and electrical conduction properties of phthalocyanine thin films. Coord. Chem. Rev. 156, 237–274 (1996) Hackam, R., Harrop, P.: Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes. IEEE Trans. Electron. Dev. 19, 1231–1238 (1972) Hameed, T.A., Mohamed, F., Abdelghany, A.M., Turky, G.: Influence of SiO2 nanoparticles on morphology, optical, and conductivity properties of Poly (ethylene oxide). J. Mater. Sci. Mater. Electron. 10422 (2020a) Hameed, T.A., Moustafa, S.H., Shaban, H., Mansour, B.A.: The effect of selenium on the structural, morphology, optical, electrical properties of Cu2Te thin films for thermoelectric and photovoltaic applications. Opt. Mater. 109, 110308 (2020b) Hameed, T.A., Wassel, A.R., El Radaf, I.M.: Investigating the effect of thickness on the structural, morphological, optical and electrical properties of AgBiSe2 thin films. J. Alloys Compd. 805, 1–11 (2019) Hattori, K., Torii, Y.: A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer. Solid State Electron. 34, 527–531 (1991) Hudait, M.K., Venkateswarlu, P., Krupanidhi, S.B.: Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures. Solid State Electron. 45, 133–141 (2001) Karabulut, A., Efeoglu, H., Turut, A.: Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures. J. Semicond. 38, 054003 (2017) Karataş, Ş., Kara, Z.: Temperature dependent electrical and dielectric properties of Sn/p-Si metal–semiconductor (MS) structures. Microelectron. Reliab. 51, 2205–2209 (2011) Karataş, Ş., Türüt, A.: The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy. Vacuum 74, 45–53 (2004) Karataş, Ş., Altındal, Ş., Türüt, A., Özmen, A.: Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts. Appl. Surf. Sci. 217, 250–260 (2003) Karataş, Ş., Altındal, Ş., Çakar, M.: Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures. Phys. B 357, 386–397 (2005) Kim, C.H., Yaghmazadeh, O., Tondelier, D., Jeong, Y.B., Bonnassieux, Y., Horowitz, G.: Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength. J. Appl. Phys. 109, 083710 (2011) Mansour, B.A., Zawawi, I.K.E.L., Elsayed-Ali, H.E., Hameed, T.A.: Preparation and characterization of optical and electrical properties of copper selenide sulfide polycrystalline thin films. J. Alloys Compd. 740, 1125–1132 (2018) Mohammad, S.N., Fan, Z.F., Botchkarev, A.E., Kim, W., Aktas, O., Morkoç, H., Shiwei, F., Jones, K.A., Derengek, M.A.: Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes. Philos. Mag. B 81, 453–460 (2001) Mönch, W.: Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities. J. Vacuum Sci. Technol. B Microelectron. Nanometer Struct. Process. Meas. Phenom. 17, 1867–1876 (1999) Ng, K.K., Card, H.C.: Asymmetry in the SiO2 tunneling barriers to electrons and holes. J. Appl. Phys. 51, 2153–2157 (1980) Nielsen, O.M.: Influence of semiconductor barrier tunneling on the current–voltage characteristics of tunnel metal–oxide–semiconductor diodes. J. Appl. Phys. 54, 5880–5886 (1983) Orak, İ., Toprak, M., Turut, A.: Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction. Phys. Scr. 89, 115810 (2014) Özden, Ş., Tozlu, C., Pakma, O.: Temperature dependent electrical transport in Al/Poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor by sol-gel spin coating method. Int. J. Photoenergy 2016, 6157905 (2016) Özerli, H., Bekereci, A., Türüt, A., Karataş, Ş.: Electrical and photovoltaic properties of Ag/p-Si structure with GO doped NiO interlayer in dark and under light illumination. J. Alloys Compd. 718, 75–84 (2017) Padovani, F.A.: Thermionic emission in Au · GaAs Schottky barriers. Solid State Electron. 11, 193–200 (1968) Perera, A.G.U., Shen, W.Z., Ershov, M., Liu, H.C., Buchanan, M., Schaff, W.J.: Negative capacitance of GaAs homojunction far-infrared detectors. Appl. Phys. Lett. 74, 3167–3169 (1999) Prabakar, K., Narayandass, S.K., Mangalaraj, D.: Dielectric properties of Cd0.6Zn0.4Te thin films. Phys. Status Solidi A 199, 507–514 (2003) Rhoderick, E.H., Rhoderick, E.: Metal-semiconductor contacts. Clarendon Press, Oxford (1978) Röhr, J.A., Kirchartz, T., Nelson, J.: On the correct interpretation of the low voltage regime in intrinsic single-carrier devices, Journal of physics. Condens. Matter Inst. Phys. J. 29, 205901 (2017) Saha, S.K., Kumar, R., Kuchuk, A., Stanchu, H., Mazur, Y.I., Yu, S.-Q., Salamo, G.J.: GaAs epitaxial growth on R-plane sapphire substrate. J. Cryst. Growth 548, 125848 (2020) Sattar, A.A., Rahman, S.A.: Dielectric Properties of Rare Earth Substituted Cu–Zn Ferrites. Phys. Status Solidi A 200, 415–422 (2003) Singh, A., Reinhardt, K.C., Anderson, W.A.: Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions. J. Appl. Phys. 68, 3475–3483 (1990) Song, Y.P., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.: On the difference in apparent barrier height as obtained from capacitance–voltage and current–voltage–temperature measurements on Al/p-InP Schottky barriers. Solid State Electron. 29, 633–638 (1986) Sze, S.M., Ng, K.K.: Physics of semiconductor devices. Wiley, Hoboken (2006) Tataroğlu, A.: Electrical and dielectric properties of MIS Schottky diodes at low temperatures. Microelectron. Eng. 83, 2551–2557 (2006) Teffahi, A., Hamri, D., Mostefa, A., Saidane, A., Al-Saqri, N., Felix, J.F., Henini, M.: Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1 − xNx Schottky diodes. Curr. Appl. Phys. 16, 850–858 (2016) Tung, R.T.: Electron transport at metal–semiconductor interfaces: general theory. Phys Rev B 45, 13509 (1992) Wang, D., Zhu, J., Ding, L., Gao, P., Pan, X., Sheng, J., Ye, J.: Interface electric properties of Si/organic hybrid solar cells using impedance spectroscopy analysis. Jpn. J. Appl. Phys. 55, 056601 (2016) Wei, L.L., Shang, D.S., Sun, J.R., Lee, S.B., Sun, Z.G., Shen, B.G.: Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems. Nanotechnology 24, 325202 (2013) Werner, J.H., Güttler, H.H.: Barrier inhomogeneities at Schottky contacts. J. Appl. Phys. 69, 1522–1533 (1991) Wu, I.W., Wang, P.-S., Tseng, W.-H., Chang, J.-H., Wu, C.-I.: Correlations of impedance–voltage characteristics and carrier mobility in organic light emitting diodes. Org. Electron. 13, 13–17 (2012) Yakuphanoglu, F., Caglar, Y., Caglar, M., Ilıcan, S.: Electrical characterization of the diodes-based nanostructure ZnO:B. Eur. Phys. J. Appl. Phys. 58, 30101 (2012) Zhang, W., Xue, J., Zhang, L., Zhang, T., Lin, Z., Zhang, J., Hao, Y.: Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures. Appl. Phys. Lett. 110, 252102 (2017)