Investigating the spectra of electron spin resonance in SiGe/Si heterolayers doped with phosphorous
Tóm tắt
Studies of the spin resonance spectra of electrons localized on donors and the conduction electrons in Si1 − x
Ge
x
layers grown on silicon show that the phosphorous atoms in a SiGe layer can have two positions in the lattice. The line with g ∼ 1.998 refers to the electron localized in the phosphorous atom with a predominantly silicon environment; the line with g ∼ 1.994 is observed when there is a substantial concentration of germanium in the phosphorous environment.
Tài liệu tham khảo
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