Interplay of physical and chemical aspects in the PECVD and etching of thin solid films

Lieberman, 1994 Golant, 1980 Smirnov, 1981 Hess, 1993 Kummer, 2002, Mater. Sci. Eng. B, 89, 288, 10.1016/S0921-5107(01)00801-7 Lymberopoulos, 1995, J. Res. Natl. Inst. Stand. Technol., 100, 473, 10.6028/jres.100.036 Jaeger, 1995, Plasma Phys., 2, 2597, 10.1063/1.871222 Chatam, 1984, J. Chem. Phys., 81, 1770, 10.1063/1.447848 Christophorou, 2000, J. Phys. Chem. Ref. Data, 29 Peterson, 1972, J. Chem. Phys., 56, 6068, 10.1063/1.1677156 Sommerer, 1991, Appl. Phys. Lett., 59, 638, 10.1063/1.105409 Sommerer, 1992, J. Vac. Sci. Technol. B, 10, 2179, 10.1116/1.586186 Margenau, 1946, Phys. Rev., 69, 508, 10.1103/PhysRev.69.508 Myers, 1969, J. Phys., B2, 393 Eliason, 1959, J. Chem. Phys., 30, 1426, 10.1063/1.1730216 Wu, 2004, Science, 306, 2227, 10.1126/science.1104085 Fascella, 2004, J. Phys. Chem. A, 108, 3829, 10.1021/jp037518k Cavallotti, 2002, J. Phys. Chem. A, 106, 7769, 10.1021/jp025922y Cavallotti, 2004, J. Cryst. Growth, 268, 76, 10.1016/j.jcrysgro.2004.04.033 Godyak, 2003, Plasma Phys. Control. Fusion, 45, A399, 10.1088/0741-3335/45/12A/026 Graves, 1986, IEEE Trans. Plasma Sci., 14, 78, 10.1109/TPS.1986.4316510 Bell, 1970, Ind. Eng. Chem., 9, 160 Bell, 1978, Solid State Technol. Porteous, 1991, IEEE Trans. Plasma Sci., 19, 204, 10.1109/27.106815 Stewart, 1994, J. Vac. Sci. Technol. B, 12, 478, 10.1116/1.587102 Stewart, 1995, Plasma Sources Sci. Technol., 4, 36, 10.1088/0963-0252/4/1/005 Wu, 1995, Plasma Sources Sci. Technol., 4, 22, 10.1088/0963-0252/4/1/003 Meyyappan, 1993, J. Appl. Phys., 74, 2250, 10.1063/1.354708 Cavallotti, 1998, J. Electrochem. Soc., 145, 4332, 10.1149/1.1838960 Masi, 1998, Chem. Eng. Sci., 53, 3875, 10.1016/S0009-2509(98)00197-3 Boudart, 1984 Lieberman, 1988, IEEE Trans. Plasma Sci., 16, 638, 10.1109/27.16552 Godyak, 1990, Phys. Rev. A, 42, 2299, 10.1103/PhysRevA.42.2299 Coburn, 1974, J. Appl. Phys., 50, 3186 Graves, 2002, Appl. Surf. Sci., 192, 72, 10.1016/S0169-4332(02)00021-1 Satake, 2003, J. Vac. Sci. Technol. A, 21, 484, 10.1116/1.1554939 Von Keudell, 1994, J. Appl. Phys., 75, 7718, 10.1063/1.356603 Zhang, 2001, J. Vac. Sci. Technol. A, 19, 524, 10.1116/1.1349728 Zhang, 2000, J. Vac. Sci. Technol. A, 18, 2661, 10.1116/1.1319816 Stout, 1993, J. Vac. Sci. Technol. A, 11, 2562, 10.1116/1.578607 Miyagawa, 2001, Surf. Coat. Technol., 136, 122, 10.1016/S0257-8972(00)01040-9 Barone, 1996, Plasma Sources Sci. Technol., 5, 187, 10.1088/0963-0252/5/2/011 Harris, 1993, J. Phys. Chem., 93, 23, 10.1021/j100103a007 Kang, 1989, J. Chem. Phys., 5, 2824, 10.1063/1.455932 Rondanini, 2004, J. Cryst. Growth, 272, 52, 10.1016/j.jcrysgro.2004.08.051 Hansen, 2000, Phys. Rev. B, 62, 2869, 10.1103/PhysRevB.62.2869 Lam, 2001, Phys. Rev. B, 6403 D.G. Vlachos, Advances in Chemical Engineering, vol. 30, in press. Ventzek, 1993, Appl. Phys. Lett., 63, 605, 10.1063/1.109963 Bukowski, 1996, J. Appl. Phys., 80, 2614, 10.1063/1.363169 Miller, 1995, J. Res. Natl. Inst. Stand. Technol., 100, 427, 10.6028/jres.100.032 Lichtenberg, 1997, Plasma Sources Sci. Technol., 6, 437, 10.1088/0963-0252/6/3/022 Lichtenberg, 1994, J. Appl. Phys., 75, 2339, 10.1063/1.356252 Lee, 1995, J. Vac. Sci. Technol. A, 13, 368, 10.1116/1.579366 Kouznetsov, 1996, Plasma Sources Sci. Technol., 5, 662, 10.1088/0963-0252/5/4/008 Lee, 1997, J. Vac. Sci. Technol. A, 15, 113, 10.1116/1.580452 Kouznetsov, 1999, J. Appl. Phys., 86, 4142, 10.1063/1.371339 Lieberman, 1999, Appl. Phys. Lett., 75, 3617, 10.1063/1.125406 Chabert, 2001, Plasma Sources Sci. Technol., 10, 478, 10.1088/0963-0252/10/3/313 Chabert, 2003, J. Appl. Phys., 94, 831, 10.1063/1.1580196 Marakhtanov, 2003, J. Vac. Sci. Technol. A, 21, 1849, 10.1116/1.1613953 Kortshagen, 1999, IEEE Trans. Plasma Sci., 27, 1297, 10.1109/27.799806 Masi, 1992, J. Cryst. Growth, 124, 483, 10.1016/0022-0248(92)90504-C Benson, 1976 M. Di Stanislao, Ph.D. thesis, Chemical vapor deposition and plasma etching of thin solid films: from basic to applied, Politecnico di Milano, 2004. Peng, 1993, Israel J. Chem., 33, 449, 10.1002/ijch.199300051 Frisch, 1998 C. Cavalloti, Unpublished results. Zhang, 2000, J. Appl. Phys., 87, 1060, 10.1063/1.371980 Tuckerman, 1996, J. Phys. Chem., 100, 12878, 10.1021/jp960480+ Head-Gordon, 1996, J. Phys. Chem., 100, 13213, 10.1021/jp953665+ Tersoff, 1986, Phys. Rev. Lett., 56, 632, 10.1103/PhysRevLett.56.632 Voter, 2002, Annu. Rev. Mater. Res., 32, 321, 10.1146/annurev.matsci.32.112601.141541 Iannuzzi, 2003, Phys. Rev. Lett., 90, 10.1103/PhysRevLett.90.238302 Satake, 2003, J. Chem. Phys., 118, 6503, 10.1063/1.1559151 M. Masi, M. Di Stanislao, A. Veneroni, Prog. Cryst. Growth Charact. Mater. 47 (2005) 239–270.