Interface structure of a chlorine-doped Si3N4 studied by high-resolution transmission electron microscopy

Journal of Materials Science Letters - Tập 16 - Trang 453-456 - 1997
H.-J. KLEEBE1, G. PEZZOTTI2, T. NISHIDA2
1Material Research Institute (IMAI), University of Bayreuth, Bayreuth, Germany
2Department of Materials, Kyoto Institute of Technology, Matsugasaki, Kyoto, Japan

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