Insight into the underlying competitive mechanism for the shift of the charge neutrality point in a trilayer-graphene field-effect transistor

Lee, 2008, Measurement of the elastic properties and intrinsic strength of monolayer graphene, Science, 321, 385, 10.1126/science.1157996 Hu, 2019, Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor, Mater. Horiz., 6, 302, 10.1039/C8MH01499J Geim, 2009, Graphene: status and prospects, Science, 324, 1530, 10.1126/science.1158877 Novoselov, 2004, Electric field effect in atomically thin carbon films, Science, 306, 666, 10.1126/science.1102896 Novoselov, 2005, Two-dimensional gas of massless Dirac fermions in graphene, Nature, 438, 197, 10.1038/nature04233 Kou, 2014, Opening a band gap without breaking lattice symmetry: a new route toward robust graphene-based nanoelectronics, Nanoscale, 6, 7474, 10.1039/c4nr01102c Zhu, 2009, Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene, Phys. Rev. B, 80, 235402, 10.1103/PhysRevB.80.235402 Sugawara, 2018, Selective fabrication of free-standing ABA and ABC trilayer graphene with/without Dirac-cone energy bands, NPG Asia Mater., 10, e466, 10.1038/am.2017.238 Zhang, 2009, Direct observation of a widely tunable bandgap in bilayer graphene, Nature, 459, 820, 10.1038/nature08105 Lui, 2011, Observation of an electrically tunable band gap in trilayer graphene, Nat. Phys., 7, 944, 10.1038/nphys2102 Zhang, 2020, Light-induced irreversible structural phase transition in trilayer graphene, Light Sci. Appl., 9, 174, 10.1038/s41377-020-00412-6 Bao, 2011, Stacking-dependent band gap and quantum transport in trilayer graphene, Nat. Phys., 7, 948, 10.1038/nphys2103 Craciun, 2009, Trilayer graphene is a semimetal with a gate-tunable band overlap, Nat. Nanotechnol., 4, 383, 10.1038/nnano.2009.89 Zou, 2013, Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric fields, Nano Lett., 13, 369, 10.1021/nl303375a Gao, 2020, Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene, Nat. Commun., 11, 546, 10.1038/s41467-019-14022-3 Hao, 2020, Electric field tunable unconventional superconductivity in alternating twist magic-angle trilayer graphene, Science, 371, 1131 Cao, 2018, Unconventional superconductivity in magic-angle graphene superlattices, Nature, 556, 43, 10.1038/nature26160 Sun, 2019, A force-engineered lint roller for superclean graphene, Adv. Mater., 31, 1902978, 10.1002/adma.201902978 Feng, 2014, Temperature and gate voltage dependent electrical properties of graphene field-effect transistors, Carbon, 78, 250, 10.1016/j.carbon.2014.07.001 Xu, 2012, Investigating the mechanism of hysteresis effect in graphene electrical field device fabricated on SiO2 substrates using Raman spectroscopy, Small, 8, 2833, 10.1002/smll.201102468 Yang, 2012, The influence of atmosphere on electrical transport in graphene, Carbon, 50, 1727, 10.1016/j.carbon.2011.12.008 Yang, 2011, Strain induced shift of Dirac points and the pseudo-magnetic field in graphene, J. Phys. Condens. Matter, 23, 505502, 10.1088/0953-8984/23/50/505502 Chen, 2009, Ionic screening of charged-impurity scattering in graphene, Nano Lett., 9, 1621, 10.1021/nl803922m Wessely, 2012, Hysteresis of in situ CCVD grown graphene transistors, Electrochem. Solid State, 15, K31, 10.1149/2.019204esl Liao, 2010, Hysteresis reversion in graphene field-effect transistors, J. Chem. Phys., 133 Lohmann, 2009, Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping, Nano Lett., 9, 1973, 10.1021/nl900203n Lafkioti, 2010, Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions, Nano Lett., 10, 1149, 10.1021/nl903162a Qiu, 2020, Insight into the origins of figures of merit and design strategies for organic/inorganic lead-halide perovskite solar cells, Solar RRL, 4, 2000452, 10.1002/solr.202000452 Ni, 2007, Graphene thickness determination using reflection and contrast spectroscopy, Nano Lett., 7, 2758, 10.1021/nl071254m Liu, 2018, Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions, Nature, 557, 696, 10.1038/s41586-018-0129-8 Zhang, 2021, Lattice defect engineering enables performance-enhanced MoS2 photodetection through a paraelectric BaTiO3 dielectric, ACS Nano, 13370, 10.1021/acsnano.1c03402 Garg, 2018, Revealing the role of nitrogen on hydride nucleation and stability in pure niobium using first-principles calculations, Supercond. Sci. Technol., 31, 115007, 10.1088/1361-6668/aae147 Ren, 2019, A two-dimensional vertical van der Waals heterostructure based on g-GaN and Mg(OH)2 used as a promising photocatalyst for water splitting: a first-principles calculation, J. Appl. Phys., 126, 10.1063/1.5099125 Kresse, 1996, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B, 54, 11169, 10.1103/PhysRevB.54.11169 Kresse, 1996, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set, Phys. Rev. B, 6, 15 Perdew, 1996, Generalized gradient approximation made simple, Phys. Rev. Lett., 77, 3865, 10.1103/PhysRevLett.77.3865 Momma, 2008, VESTA: a three-dimensional visualization system for electronic and structural analysis, J. Appl. Crystallogr., 41, 653, 10.1107/S0021889808012016 Momma, 2011, VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data, J. Appl. Crystallogr., 44, 1272, 10.1107/S0021889811038970 Hongzhiwei Technology, 2021 Tung, 2000, Chemical bonding and fermi level pinning at metal-semiconductor interfaces, Phys. Rev. Lett., 84, 6078, 10.1103/PhysRevLett.84.6078 Qiu, 2015, Electrically tunable and negative Schottky barriers in multi-layered graphene/MoS2 heterostructured transistors, Sci. Rep., 5, 13743, 10.1038/srep13743 Takei, 2011, Quantum confinement effects in nanoscale-thickness InAs membranes, Nano Lett., 11, 5008, 10.1021/nl2030322 Lui, 2011, Imaging stacking order in few-layer graphene, Nano Lett., 11, 164, 10.1021/nl1032827 Sun, 2010, Growth of graphene from solid carbon sources, Nature, 468, 549, 10.1038/nature09579 Zhang, 2005, Experimental observation of the quantum Hall effect and Berry's phase in graphene, Nature, 438, 201, 10.1038/nature04235 Moriconi, 2011, Graphene conductivity near the charge neutral point, Phys. Rev. B, 84, 193401, 10.1103/PhysRevB.84.193401 Jiang, 2007, Quantum Hall states near the charge-neutral Dirac point in graphene, Phys. Rev. Lett., 99, 106802, 10.1103/PhysRevLett.99.106802 Schmidt, 2014, Transport properties of monolayer MoS2 grown by chemical vapor deposition, Nano Lett., 14, 1909, 10.1021/nl4046922 Hwang, 2007, Carrier transport in two-dimensional graphene layers, Phys. Rev. Lett., 98, 186806, 10.1103/PhysRevLett.98.186806 Hwang, 2009, Screening-induced temperature-dependent transport in two-dimensional graphene, Phys. Rev. B, 79, 165404, 10.1103/PhysRevB.79.165404 Kaasbjerg, 2012, Phonon-limited mobility in n-type single-layer MoS2 from first principles, Phys. Rev. B, 85, 115317, 10.1103/PhysRevB.85.115317 Wang, 2010, Hysteresis of electronic transport in graphene transistors, ACS Nano, 4, 7221, 10.1021/nn101950n Li, 2020, Global control of stacking-order phase transition by doping and electric field in few-layer graphene, Nano Lett., 20, 3106, 10.1021/acs.nanolett.9b05092 Wang, 2010, Hysteresis of electronic transport in graphene transistors, ACS Nano, 4, 7221, 10.1021/nn101950n Lu, 2021, Large-area uniform few-layer PtS2: synthesis, structure and physical properties, Mater. Today Phys., 18, 100376, 10.1016/j.mtphys.2021.100376 Jakob, 2020, Pulsed force kelvin probe force microscopy, ACS Nano, 14, 4839, 10.1021/acsnano.0c00767 Chen, 2017, Insight into interfaces and junction of polycrystalline silicon solar cells by kelvin probe force microscopy, Nano Energy, 36, 303, 10.1016/j.nanoen.2017.04.045 Zhao, 2020, Replacing the metal electrodes in triboelectric nanogenerators: high-performance laser-induced graphene electrodes, Nano Energy, 75, 104958, 10.1016/j.nanoen.2020.104958 Zhou, 2018, P-GaSe/N-MoS2 vertical heterostructures synthesized by van der Waals epitaxy for photoresponse modulation, Small, 14, 1702731, 10.1002/smll.201702731 Xiao, 2020, Inhomogeneous doping of perovskite materials by dopants from hole-transport layer, Matter, 2, 261, 10.1016/j.matt.2019.10.005 Romero, 2008, n-Type behavior of graphene supported on Si/SiO2 substrates, ACS Nano, 2, 2037, 10.1021/nn800354m Kim, 2003, Hysteresis caused by water molecules in carbon nanotube field-effect transistors, Nano Lett., 3, 193, 10.1021/nl0259232 Chakrapani, 2007, Charge transfer equilibria between diamond and an aqueous oxygen electrochemical redox couple, Science, 318, 1424, 10.1126/science.1148841 Berciaud, 2009, Probing the intrinsic properties of exfoliated graphene: Raman spectroscopy of free-standing monolayers, Nano Lett., 9, 346, 10.1021/nl8031444 Chen, 2008, Intrinsic and extrinsic performance limits of graphene devices on SiO2, Nat. Nanotechnol., 3, 206, 10.1038/nnano.2008.58 Schedin, 2007, Detection of individual gas molecules adsorbed on graphene, Nat. Mater., 6, 652, 10.1038/nmat1967 Kang, 2008, Electronic structure of graphene and doping effect on SiO2, Phys. Rev. B, 78, 115404, 10.1103/PhysRevB.78.115404 Jurchescu, 2005, Electronic transport properties of pentacene single crystals upon exposure to air, Appl. Phys. Lett., 87, 10.1063/1.2001130 Nguyen, 2007, Fano lineshape and phonon softening in single isolated metallic carbon nanotubes, Phys. Rev. Lett., 98, 145504, 10.1103/PhysRevLett.98.145504 Ryu, 2010, Atmospheric oxygen binding and hole doping in deformed graphene on a SiO2 substrate, Nano Lett., 10, 4944, 10.1021/nl1029607 Yoon, 2011, Negative thermal expansion coefficient of graphene measured by Raman spectroscopy, Nano Lett., 11, 3227, 10.1021/nl201488g Gao, 2020, Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene, Nat. Commun., 11, 546, 10.1038/s41467-019-14022-3 Gupta, 2013, Electronic and phonon bandstructures of pristine few layer and metal doped graphene using first principles calculations, AIP Adv., 3, 10.1063/1.4794949 Fan, 2012, Interaction between graphene and the surface of SiO2, J. Phys. Condens. Matter, 24, 305004, 10.1088/0953-8984/24/30/305004 Hibino, 2009, Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy, Phys. Rev. B, 79, 125437, 10.1103/PhysRevB.79.125437