Jiabin Feng1,2,3, Yongzhuo Li1,2,3, Jianxing Zhang1,2,3, Yuqian Tang1,2,3, Hao Sun1,2,3, Lin Gan1,2,3, Cun‐Zheng Ning1,2,3,4
1Beijing National Research Center for Information Science and Technology, 100084 Beijing, China.
2Department of Electronic Engineering, Tsinghua University, 100084 Beijing, China
3Frontier Science Center for Quantum Information, 100084 Beijing, China.
4School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
Tóm tắt
Two-dimensional (2D) semiconductors have emerged as promising candidates for various optoelectronic devices especially electroluminescent (EL) devices. However, progress has been hampered by many challenges including metal contacts and injection, transport, and confinement of carriers due to small sizes of materials and the lack of proper double heterostructures. Here, we propose and demonstrate an alternative approach to conventional current injection devices. We take advantage of large exciton binding energies in 2D materials using impact generation of excitons through an alternating electric field, without requiring metal contacts to 2D materials. The conversion efficiency, defined as the ratio of the emitted photons to the preexisting carriers, can reach 16% at room temperature. In addition, we demonstrate the first multiwavelength 2D EL device, simultaneously operating at three wavelengths from red to near-infrared. Our approach provides an alternative to conventional current-based devices and could unleash the great potential of 2D materials for EL devices.
