Influence of surface roughness on the electrical conductivity of semiconducting thin films

Physica A: Statistical Mechanics and its Applications - Tập 392 - Trang 3008-3017 - 2013
D. Ketenoğlu1, B. Ünal1
1Department of Engineering Physics, Ankara University, 06100, Tandoğan, Ankara, Turkey

Tài liệu tham khảo

Fishman, 1989, Phys. Rev. Lett., 62, 1302, 10.1103/PhysRevLett.62.1302 Fishman, 1991, Phys. Rev. B, 43, 11581, 10.1103/PhysRevB.43.11581 Palasantzas, 2000, Physica B, 61, 11109 Palasantzas, 1997, Phys. Rev. B, 56, 7726, 10.1103/PhysRevB.56.7726 Palasantzas, 1998, Phys. Rev. B, 58, 9685, 10.1103/PhysRevB.58.9685 Ando, 1982, J. Phys. Soc. Japan, 51, 3900, 10.1143/JPSJ.51.3900 Meyer, 1991, Appl. Phys. Lett., 58, 2523, 10.1063/1.104840 Meyerovich, 2002, Phys. Rev. B, 65, 155413, 10.1103/PhysRevB.65.155413 Palasantzas, 2005, Phys. Rev. B, 71, 205320, 10.1103/PhysRevB.71.205320 Meyerovich, 1995, Phys. Rev. B, 51, 17116, 10.1103/PhysRevB.51.17116 Wang, 2009, J. Mater. Sci. Technol., 25, 699, 10.1179/174328408X317075 Huang, 2009, Appl. Phys. Lett., 95, 103112, 10.1063/1.3216836 Kitaoka, 2009, Appl. Phys. Lett., 95, 052110, 10.1063/1.3202418 Chawla, 2009, Appl. Phys. Lett., 94, 252101, 10.1063/1.3157271 Ercius, 2009, Microsc. Microanal., 15, 244, 10.1017/S143192760909028X Yarimbiyik, 2009, Microelectron. Reliab., 49, 127, 10.1016/j.microrel.2008.11.003 Graham, 2010, Appl. Phys. Lett., 96, 042116, 10.1063/1.3292022 Sun, 2009, Phys. Rev. B, 79, 041402, 10.1103/PhysRevB.79.041402 Sun, 2010, Phys. Rev. B, 81, 155454, 10.1103/PhysRevB.81.155454 Stone, 1898, Phys. Rev., 6, 1 Sandomirskii, 1967, Sov. Phys. JETP, 25, 101 Jalochowski, 1988, Phys. Rev. B, 37, 8622, 10.1103/PhysRevB.37.8622 Fischer, 1980, Z. Phys. B, 39, 287, 10.1007/BF01305827 Hoffmann, 1976, Thin Solid Films, 36, 25, 10.1016/0040-6090(76)90390-4 Schumacher, 1982, Surf. Sci., 123, 384, 10.1016/0039-6028(82)90335-1 Luo, 1994, Phys. Rev. B, 49, 4858, 10.1103/PhysRevB.49.4858 Sakaki, 1987, Appl. Phys. Lett., 51, 1934, 10.1063/1.98305 Goodnick, 1985, Phys. Rev. B, 32, 8171, 10.1103/PhysRevB.32.8171 Kruithof, 1991, Phys. Rev. B, 43, 6642, 10.1103/PhysRevB.43.6642 Feenstra, 1994, Phys. Rev. Lett., 72, 2749, 10.1103/PhysRevLett.72.2749 Leung, 1984, Phys. Rev. B, 30, 647, 10.1103/PhysRevB.30.647 Trivedi, 1988, Phys. Rev. B, 38, 12298, 10.1103/PhysRevB.38.12298 Tesanovic, 1986, Phys. Rev. Lett., 57, 2760, 10.1103/PhysRevLett.57.2760 Kunze, 1993, Solid State Commun., 87, 359, 10.1016/0038-1098(93)90660-F Sheng, 1995, Phys. Rev. B, 51, 7325, 10.1103/PhysRevB.51.7325 Kaser, 1995, Z. Phys. B, 97, 139, 10.1007/BF01317598 Ketenoglu, 2012, Physica A, 391, 3828, 10.1016/j.physa.2012.03.002 Mirlin, 1999, Phys. Rev. Lett., 83, 2801, 10.1103/PhysRevLett.83.2801 Mandelbrodt, 1982 Palasantzas, 1994, Phys. Rev. E, 49, 1740, 10.1103/PhysRevE.49.1740 Krim, 1993, Phys. Rev. E, 48, 1576, 10.1103/PhysRevE.48.1576 Palasantzas, 1998, Phys. Status Solidi B, 209, 319, 10.1002/(SICI)1521-3951(199810)209:2<319::AID-PSSB319>3.0.CO;2-L Law, 2000, J. Appl. Phys., 88, 508, 10.1063/1.373687 Hedegard, 1995, Phys. Rev. B, 51, 10869, 10.1103/PhysRevB.51.10869 Jones, 1966 Palasantzas, 2003, J. Appl. Phys., 93, 320, 10.1063/1.1522490 E.I. Rogacheva, S.N. Grigorov, O.N. Nashchekina, A. Yakovleva, S. Lyubchenko, 21st International Conference on Thermoelectronics, 2002, p. 284. Ünal, 2012, AIP Adv., 2, 042145-1, 10.1063/1.4768275