Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

Nakamura, 1997 Song, 2012, Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN, Appl. Phys. Lett., 100, 212103, 10.1063/1.4720507 Cao, 2009, Investigation of the electronic properties of nitrogen vacancies in AlGaN, J. Appl. Phys., 105, 063707, 10.1063/1.3089239 Lewis, 2007, Low-resistance Ni-based Schottky diodes on freestanding n-GaN, Appl. Phys. Lett., 91, 162103, 10.1063/1.2799739 He, 2016, GaN high electron mobility transistors with AlInN back barriers, J. Alloy. Compd., 662, 16, 10.1016/j.jallcom.2015.12.031 Hong, 2008, Local magnetic moment induced by Ga vacancy defect in GaN, J. Appl. Phys., 103, 063907, 10.1063/1.2890746 Rhode, 2014, Structure and strain relaxation effects of defects in Inx Ga1−x N epilayers, J. Appl. Phys., 116, 103513, 10.1063/1.4894688 Uedono, 2014, Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam, Appl. Phys. Lett., 105, 052108, 10.1063/1.4892834 Kobayashi, 2006, Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition, Appl. Phys. Lett., 89, 111918, 10.1063/1.2354413 Kobayashi, 2007, Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates, Appl. Phys. Lett., 90, 041908, 10.1063/1.2433758 Kim, 2006, Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature, Appl. Phys. Lett., 89, 031916, 10.1063/1.2227616 Grandjean, 1996, Nitridation of sapphire: effect on the optical properties of GaN epitaxial overlayers, Appl. Phys. Lett., 69, 2071, 10.1063/1.116883 Heinlein, 1997, Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation, Appl. Phys. Lett., 71, 341, 10.1063/1.119532 Kumar, 2014, Low temperature growth of GaN epitaxial layers on sapphire (0001) by pulsed laser deposition using liquid gallium target, Sci. Adv. Mater., 6, 1215, 10.1166/sam.2014.1895 Kushvaha, 2013, Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target, AIP Adv., 3, 092109, 10.1063/1.4821276 Jabli, 2015, Optical analysis of biaxial stress distribution in Al0.26Ga0.74N/GaN/Si HEMT's, J. Alloy. Compd., 650, 533, 10.1016/j.jallcom.2015.07.240 Vispute, 1997, Growth of epitaxial GaN films by pulsed laser deposition, Appl. Phys. Lett., 71, 102, 10.1063/1.119441 Zheng, 2003, Method for measurement of lattice parameter of cubic GaN layers on GaAs (0 0 1), J. Cryst. Growth, 250, 345, 10.1016/S0022-0248(02)02465-X Shan, 1996, Strain effects on excitonic transitions in GaN: deformation potentials, Phys. Rev. B, 54, 13460, 10.1103/PhysRevB.54.13460 Moram, 2007, Accurate experimental determination of the Poisson's ratio of GaN using high-resolution x-ray diffraction, J. Appl. Phys., 102, 10.1063/1.2749484 Kushvaha, 2016, Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy, CrystEngComm, 18, 744, 10.1039/C5CE02257F Liu, 2014, Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN, Cryst. Eng. Comm., 16, 8058, 10.1039/C4CE01003E Tripathy, 2002, Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si (111), J. Appl. Phys., 92, 3503, 10.1063/1.1502921 Jiang, 2016, Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate, Opt. Mater. Exp., 6, 1817, 10.1364/OME.6.001817 Davydov, 1998, Phonon dispersion and raman scattering in hexagonal GaN and AlN, Phys. Rev. B, 58, 12899, 10.1103/PhysRevB.58.12899 Harutyunyan, 2001, High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures, J. Phys. D. Appl. Phys., 34, A35, 10.1088/0022-3727/34/10A/308 Cho, 2008, Growth temperature dependence of strain in GaN, grown on c-plane sapphire substrate, J. Mater. Sci., 43, 406, 10.1007/s10853-007-2196-3 Li, 1999, Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN, Appl. Phys. Lett., 74, 2821, 10.1063/1.124025 Kisielowski, 1996, Strain-related phenomena in GaN thin films, Phys. Rev. B, 54, 17745, 10.1103/PhysRevB.54.17745 Oliver, 1992, An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments, J. Mater. Res., 7, 1564, 10.1557/JMR.1992.1564 Tsai, 2008, Berkovich nanoindentation and deformation mechanisms in GaN thin films, Appl. Surf. Sci., 254, 1997, 10.1016/j.apsusc.2007.08.022 Rais-Zadeh, 2014, Gallium nitride as an electromechanical material, J. Microelectromechanical Syst., 23, 1252, 10.1109/JMEMS.2014.2352617 Trentler, 2001, Preparation of nanocrystalline molybdenum disilicide (MoSi2) by a chlorine-transfer reaction, Chem. Matter, 11, 3962, 10.1021/cm010267c Kucheyev, 2002, Mechanical deformation of single-crystal ZnO, Appl. Phys. Lett., 80, 956, 10.1063/1.1448175 Navamathavan, 2006, ‘Pop-in’ phenomenon during nanoindentation in expitaxial GaN thin films on c-plane sapphire substrates', Mater. Chem. Phys., 99, 410, 10.1016/j.matchemphys.2005.11.021