Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

Science in China Series E: Technological Sciences - 2003
Jun Chen1,2, Shuming Zhang1, Baoshun Zhang1, Jianjun Zhu1, Feng Ge1, Li Duan1, Yutian Wang1, Hui Yang1, Wenxu Zheng2
1National Research Center for Opto-Electronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
2Department of Material Science, Sichuan University, Chengdu, China

Tóm tắt

Từ khóa


Tài liệu tham khảo

Thông tin
Thông tin xuất bản

Science in China Series E: Technological Sciences

Thông tin tác giả