Influence of Laser Irradiation and Ambient Gas in Preparation of PZT Films by Laser Ablation

Springer Science and Business Media LLC - 1990
Akira Morimoto1, Shigeru Otsubo2, Tatsuo Shimizu1, Toshiharu Minamikawa3, Yasuto Yonezawa3, Hideo Kidoh4, T. Ogawa4
1Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
2Shibuya Kogyo Co., Ltd., Kanazawa 920, Japan
3Industrial Research Institute of Ishikawa Prefecture, Kanazawa 920-02, Japan
4Murata Mfg. Co, Ltd., Nagaokakyo, Kyoto 617, Japan

Tóm tắt

ABSTRACTPb(Zr0.52Ti0. 48)O3 (PZT) films were prepared on r-plane sapphire substrates by the laser ablation method utilizing ArF excimer laser in O2 or N2O environment. The composition of the films deposited in O2 environment was found to be fairly close to the composition of the target material for a wide range of substrate temperatures, 400 – 750 °c. Increasing the laser fluence (the laser power density) for the ablation enhances the formation of the perovskite structure rather than the pyrochlore one. Use of N2O ambient gas instead of O2 gas enhances the formation of the perovskite structure of PZT films. Furthermore, it was found that a laser irradiation on the growing film surface during deposition enhances the formation of the perovskite structure.

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Tài liệu tham khảo

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