Ảnh hưởng của trường điện bên trong đối với đặc tính quang phổ của diốt phát quang siêu phát sáng trên nền GaN màu xanh

Alahyarizadeh Gh, Aghajani H, Mahmodi H, Rahmani R, Hassan Z (2012) Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations. Opt Laser Technol 44:12 Ambacher O, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J (1999) Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J Appl Phys 85:3222 Arnaudov B, Domanevskii DS, Evtimova S, Ivanov Ch, Kakanakov R (2009) Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. Microelectron J 40:346 Bunker KL, Garcia R, Russell PE (2005) Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode. Appl Phys Lett 86:082108 Burns G (1990) Solid state physics. Academic Press, New York Cartwright AN, Sweeney PM, Prunty T, Bour DP, Kneissel M (1999) Electric field distribution in strained p-i-n GaN/InGaN multiple quantum well structures. MRS Internet J Nitride Semicond Res 4:1 Chen J-R, Wu Y-C, Ling S-C, Ko T-S, Lu T-C, Kuo H-C, Kuo Y-K, Lu S (2010) Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes. Appl Phys B 98:779 Chen S, Li W, Zhang Z, Childs D, Zhou K, Orchard J, Kennedy K, Hugues M, Clarke E, Ross I, Wada O, Hogg R (2015) GaAs based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot Structures. Nanoscale Res Lett 10:340 David A, Grundmann MJ (2010) Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes. Appl Phys Lett 97:033501 Fan WJ, Li MF, Chang TC (1996) Valence hole subbands and optical gain spectra of GaN/AlxGa1−xN strained quantum wells. J Appl Phys 80:3471 Feltin E, Castiglia A, Cosendey G, Sulmoni L, Carlin JF, Grandjean N, Rossetti M, Dorsaz J, Laino V, Duelk M, Velez C (2009) Broadband blue superluminescent light-emitting diodes based on GaN. Appl Phys Lett 95:081107 Fox M (2001) Optical properties of solids. Oxford University Press, Oxford Galczak J, Sarzala RP, Nakwaski W (2004) Spatial separation of recombining carriers within nitride GaN/(AlGa)N quantum wells induced by piezoelectric phenomena. Opto Electron Rev 12:369 Hangleiter A, Im JS, Kollmer H, Heppel S, Off J, Scholz F (1998) The role of piezoelectric fields in GaN-based quantum wells. MRS Internet J Nitride Semicond Res 3:1 Hardy MT, Kelchner KM, Lin YD, Hsu PS, Fujito K, Ohta H, Speck JS, Nakamura S, DenBaars SP (2009) m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching. Appl Phys Express 2:121004 Kafar A, Stanczyk S, Grzanka S, Czernecki R, Leszczynski M, Suski T, Perlin P (2012) Cavity suppression in nitride based superluminescent diodes. J Appl Phys 111:083106 Kim M-H, Schubert MF, Dai Q, Kim JK, SchubertE F, Piprek J, Park Y (2007) Origin of efficiency droop in GaN-based light-emitting diodes. Appl Phys Lett 91:183507 Ko TH, Adler DC, Fujimoto JG, Mamedov D, Prokhorov V, Shidlovsky V, Yakubovich S (2004) Ultra high resolution optical coherence tomography imaging with a broadband superluminescent diode light source. Opt Express 12:2112 Kopp F, Eichler C, Lell A, Tautz S, Ristic J, Stojetz B, Ho C, Weig T, Schwarz UT, Strauss U (2013) Blue superluminescent light-emitting diodes with output power above 100 mW for picoprojection. Jpn J Appl Phys 52:08JH07 Langer R, Simson J, Oritz V, Pelekanos NT, Barski A, Andre R, Godlewski M (1999) Giant electric fields in unstrained GaN single quantum wells. Appl Phys Lett 74:3827 Leroux M, Grandjean N, Massies J, Gil B, Lefebvre P, Bigenwald P (1999) Barrier-width dependence of group-III nitrides quantum-well transition energies. Phys Rev B 60:1496 Loeser M, Witzigmann B (2008) Multidimensional electro-opto-thermal modeling of broad-band optical devices. IEEE J Quantum Electron 44:505 Matuschek N, Duelk M (2013) Modeling and simulation of superluminescent light emitting diodes (SLEDs). IEEE J Sel Top Quantum Electron 19:7800307 Milani NM, Mohadesi V, Asgari A (2015) The effects of temperature dependent recombination rates on performance of InGaN/GaN blue superluminescent light emitting diodes. Phys E 71:64 Nardelli MB, Rapcewicz K, Bemholic J (1997) Polarization field effects on the electron hole recombination dynamics in multiple quantum wells. Appl Phys Lett 71:3135 Onuma T, Chichibu SF, Aoyama T, Nakajima K, Ahmet P, Azuhata T, Chikyow T, Sota T, Nagahama S, Mukai T (2003) Influence of internal electric field on the recombination dynamics of localized excitons in an InGaN double quantum well laser diode wafer operated at 450 nm. Jpn J Appl Phys 42:7276 Park J, Li X (2006) Theoretical and numerical analysis of superluminescent diodes. J. Light wave Technol 24:2473 Piprek J (2003) Semiconductor optoelectronic devices, introduction to physics and simulation. Elsevier Science, Amstredam Piprek J (2007) Nitride semiconductor devices: principles and simulation. Wiley, Berlin Rossetti M, Dorsaz J, Rezzonico R, Duelk M, Velez C, Feltin E, Castiglia A, Cosendey G, Carlin J-F, Grandjean N (2010) High power blue-violet superluminescent light emitting diodes with InGaN quantum wells. Appl Phys Exp 3:061002 Rossi F, Salviati G, Pavesi M, Manfredi M, Meneghini M, Zanoni E, Zehnder U (2008) Field dependence of the carrier injection mechanisms in InGaN quantum wells: its effect on the luminescence properties of blue light emitting diodes. J Appl Phys 103:093504 Ryou J-H, Yoder PD, Liu J, Lochne Z, Kim H, Choi S, Kim HJ, Dupuis RD (2009) Control of quantum-confined stark effect in InGaN-based quantum wells. IEEE J Sel Top Quantum Electron 15:1080 Schubert MF, Schubert EF (2010) Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells. Appl Phys Lett 96:131102 Sizov VS, Neploh VV, Tsatsulnikov AF, Sakharov AV, Lundin WV, Zavarin EE, Nikolaev AE, Mintairov AM, Merz JL (2010) Study of tunneling transport of carriers in structures with an InGaN/GaN active region. Semiconductors 44:1567 Sizov DS, Bhat R, Zakharian A, Song K, Allen DE, Coleman S, Zah Ch (2011) Carrier transport in InGaN MQWs of aquamarine- and green-laser diodes. IEEE J Sel Top Quantum Electron 17:1390 Takeuchi T, Sota Sh, Katsuragawa M, Komari M, Takeuchi H, Amano H, Akasaki I (1997) Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells. Jpn J Appl Phys 36:382 Wang J, Wang L, Wang L, Hao Z, Luo Y, Dempewolf A, Muller M, Bertram F, Christen J (2012) An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based lightemitting diodes. J Appl Phys 112:023107 Witzigmann B, Laino V, Luisier M, Schwarz UT, Fischer H, Feicht G, Wegscheider W, Rumbolz C, Lell A, Harle V (2006) Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures. IEEE Phot Technol Lett 18:1600 Yoshida Y, Kuwabara M, Yamashita Y, Uchiyama K, Kan H (2010) Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple quantum well laser diode. Appl Phys Lett 96:211122 Zhao Y, Han W, Song J, Li X, Liu Y, Gao D, Du G, Cao H, Chang RPH (1999) Spontaneous emission factor for semiconductor superluminescent diodes. J Appl Phys 85:3945 Zhao H, Arif RA, Tansu N (2009) Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm. IEEE J Sel Top Quantum Electron 15:1104