InSb/InAs quantum dots grown by liquid phase epitaxy

N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1999)].

J. M. Moison, F. Houzay, F. Barthe, et al., Appl. Phys. Lett. 64, 196 (1994).

F. Hatami, N. N. Ledentsov, M. Grundmann, et al., Appl. Phys. Lett. 67, 656 (1995).

G. Saint-Giroris, G. Patriarche, A. Michon, et al., Appl. Phys. Lett. 89, 031 923 (2006).

D. E. Eaglesham and M. Cerrulo, Phys. Rev. Lett. 65, 1020 (1995).

E. Alphandery, R. J. Nicolas, N. J. Mason, et al., Appl. Phys. Lett. 74, 2041 (1999).

P. Bhattacharya, A. D. Stiff, J. Roberts, and S. Chakrabarti, in Mid-Infrared Optoelectronics, Ed. by A. Kritter (Springer, New York, 2006), pp. 487–513.

C. W. Warren et al., Science 281, 2016 (1998).

G. G. Zegrya, Pis’ma Zh. Tekh. Fiz. 32(4), 12 (2006) [Tech. Phys. Lett. 32, 174 (2006)].

A. Krier, X. L. Huang, and A. Hammiche, Appl. Phys. Lett. 77, 3791 (2000).

I. E. Maronchuk, A. I. Maronchuk, T. F. Kulyutkina, et al., Poverkhnost, No. 12, 97 (2005).

A. N. Imenkov, N. M. Kolchanova, P. Kubat, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 375 (2001) [Semiconductors 35, 360 (2001)].

N. Deguffrog, M. Ramonda, A. N. Baranov, and E. Tournie, in Proceedings of the 12th International Conference on Narrow Gap Semiconductors, Touluse, France, 2005, Ser. No. 187, pp. 93–98.

S. V. Ivanov, A. N. Semenov, O. G. Lyublinskaya, et al., in Proceedings of the 12th International Conference on Narrow Gap Semiconductors, Touluse, France, 2005, Ser. No. 187, pp. 89–92.

R. J. Nicholas, P. A. Shields, R. A. Child, et al., Physica E 20, 204 (2004).

A. Ankudinov, V. Maruschak, A. Titkov, et al., Phys. Low-Dim. Struct. 3/4, 9 (2001).

M. S. Dunaevsky, A. V. Ankudinov, Z. F. Krasilnik, et al., in Proceedings of the 11th International Symposium on Nanostructures: Physics and Technology, St. Petersburg, 2003, pp. 103–104.