InP single crystal growth by the horizontal Bridgman method under controlled phosphorus vapor pressure

Journal of Crystal Growth - Tập 229 - Trang 119-123 - 2001
Atsushi Shimizu1, Jun-ichi Nishizawa1,2, Yutaka Oyama1,2,3, Ken Suto1,2,3
1Telecommunications Advancement Organization of Japan, Sendai Research Center, 519 Aoba Aramaki Aoba, Sendai 980-0845, Japan
2Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi Aoba, Sendai 980-0862, Japan
3Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aoba, Sendai 980-8579, Japan

Tài liệu tham khảo

Shimizu, 2000, J. Crystal Growth, 209, 21, 10.1016/S0022-0248(99)00538-2 Fewster, 1995, J. Appl. Cryst., 28, 451, 10.1107/S002188989500269X Bachmann, 1974, J. Electrochem. Soc., 121, 835, 10.1149/1.2401931 Kainosho, 1994, Mater Res. Soc. Symp. Proc., 325, 101, 10.1557/PROC-325-101
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Thông tin xuất bản

Journal of Crystal Growth

Tập 229

119-123

Thông tin tác giả