InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga1 − x As strain-reducing layer
Tóm tắt
Self-assembled InAs quantum dots with graded composition strain-reducing layer (SRL) grown on exact substrates were studied. It is shown that a graded In
x
Ga1 − x
As SRL leads to growth quality improvement, emission efficiency enhancement, and wavelength blueshift. Samples grown on 2° misoriented substrates with different In contents in graded In
x
Ga1 − x
As SRL were also investigated, and emission efficiency enhancement and wavelength blueshift were found when graded SRL was introduced and when the change rate of In content in graded In
x
Ga1 − x
As SRL was enlarged.
Tài liệu tham khảo
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