In Situ Electrochemical Activation of Atomic Layer Deposition Coated MoS2Basal Planes for Efficient Hydrogen Evolution Reaction

Advanced Functional Materials - Tập 27 Số 34 - 2017
Youngmin Kim1, David H. K. Jackson2, Daewon Lee1, Min Choi3,4, Tae‐Wan Kim1, Soon‐Yong Jeong1, Ho‐Jeong Chae1, Hyun Woo Kim3, Noejung Park5, Hyunju Chang3, T. F. Kuech6,2, Hyung Ju Kim1,7
1Carbon Resources Institute, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114 South Korea
2Materials Science Program, University of Wisconsin-Madison, 1509 University Ave., Madison, WI 53706, USA
3Center for Molecular Modeling and Simulation, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114 South Korea
4Department of Chemistry, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Banyeon-ri, Eonyang-eup, Ulju-gun, Ulsan, 44919 South Korea
5Department of Physics, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Banyeon-ri, Eonyang-eup, Ulju-gun, Ulsan, 44919 South Korea
6Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Dr., Madison, WI, 53706, USA
7Department of Green Chemistry and Biotechnology, University of Science and Technology, 113 Gwahangno, Yuseong, Daejeon, 34113 South Korea

Tóm tắt

Molybdenum disulfide (MoS2), which is composed of active edge sites and a catalytically inert basal plane, is a promising catalyst to replace the state‐of‐the‐art Pt for electrochemically catalyzing hydrogen evolution reaction (HER). Because the basal plane consists of the majority of the MoS2bulk materials, activation of basal plane sites is an important challenge to further enhance HER performance. Here, an in situ electrochemical activation process of the MoS2basal planes by using the atomic layer deposition (ALD) technique to improve the HER performance of commercial bulk MoS2is first demonstrated. The ALD technique is used to form islands of titanium dioxide (TiO2) on the surface of the MoS2basal plane. The coated TiO2on the MoS2surface (ALD(TiO2)‐MoS2) is then leached out using an in situ electrochemical activation method, producing highly localized surface distortions on the MoS2basal plane. The MoS2catalysts with activated basal plane surfaces (ALD(Act.)‐MoS2) have dramatically enhanced HER kinetics, resulting from more favorable hydrogen‐binding.

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Tài liệu tham khảo

10.1038/35104599

10.1021/acscatal.5b00173

10.1021/nn504484u

10.1016/j.cattod.2008.08.039

10.1039/c1ee01203g

10.1002/er.1372

10.1021/ja511559d

10.1016/j.apcatb.2012.02.009

10.1002/cctc.201100023

10.1002/cssc.201301218

10.1039/C5GC02865E

10.1126/science.1103197

10.1126/science.1127180

10.1038/nmat1752

10.1021/acsnano.5b05652

10.1021/nn503211t

10.1021/nn503412w

10.1016/j.apmt.2016.02.001

10.1039/C5CC01753J

10.1021/ja201269b

10.1039/C6TA02034H

10.1021/la504162u

10.1021/nl2020476

10.1038/nmat3439

10.1088/1468-6996/14/4/043501

10.1126/science.1141483

10.1021/am405075f

10.1021/am404843b

10.1021/am506545g

10.1021/cs500923c

10.1002/adfm.201500194

10.1021/acsnano.6b04904

10.1002/adfm.201300318

10.1039/C4EE01932F

10.1039/B803857K

10.1002/adfm.201401328

10.1021/nl403661s

10.1039/C4NR06754A

10.1038/ncomms10672

10.1002/adfm.201403863

10.1002/adfm.201601994

10.1021/jp802695e

10.1021/nl404444k

10.1007/s12274-014-0677-7

10.1038/nchem.1853

10.1021/acsenergylett.7b00111

10.1002/adfm.201604943

10.1021/jacs.6b05940

10.1038/nmat4465

10.31399/asm.tb.ttg2.9781627082693

Pourbaix M., 1974, Atlas of Electrochemical Equilibria in Aqueous Solutions

10.1021/cs400384h

10.1021/nl400258t

10.1016/j.apsusc.2016.05.007

10.1039/C5GC00272A

10.1039/C4CP04628E

10.1016/j.apcatb.2014.08.046

10.1002/cssc.201600170

10.1016/j.jnoncrysol.2013.12.009

10.1016/j.apcatb.2016.02.060

10.1039/C6EE03629E

10.1002/anie.201200699

Bader R. F. W., 1990, Atoms in Molecules: A Quantum Theory, 10.1093/oso/9780198551683.001.0001

10.1016/0927-0256(96)00008-0

10.1103/PhysRevLett.77.3865

10.1103/PhysRevB.54.11169

10.1038/nchem.1589

10.1021/jp2076325