Improving<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mi>I</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">ON</mml:mi></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>I</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">OFF</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

Superlattices and Microstructures - Tập 86 - Trang 483-492 - 2015
Atefeh Nazari1, Rahim Faez2, Hassan Shamloo1
1Department of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, 3419915195, Iran
2Electrical Engineering Department, Sharif University of Technology, Tehran, 1458889694, Iran

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