Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Semiconductor Science and Technology - Tập 13 Số 12 - Trang 1469-1471 - 1998
C. T. Foxon1, S. E. Hooper1, T.S. Cheng1, John Orton2, Guanzhou Ren1,3, B. Ya. Ber4, A. Merkulov4, С. В. Новиков1,4, V. V. Tret’yakov4
1Department of Physics, University of Nottingham University Park, Nottingham NG7 2RD, UK
2Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham NG7 2RD, UK
3Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083, People's Republic of China
4Ioffe Physical-Technical Institute, Polytekhnicheskaya Str. 26, St Petersburg 194021, Russia

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Semiconductor Science and Technology

Tập 13 Số 12

1469-1471

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