Improved deposition of ZnO:Ga thin films by sputtering with the chamber pressure
Tóm tắt
Characteristics of ZnO:Ga (GZO) thin films fabricated by RF magnetron sputtering using chamber pressure have been investigated. Low chamber pressure results in low resistivity due to high mobility and carrier concentration. Result is ascribed to minimizing the influence of residual gases in the chamber, which promotes stoichiometric composition, increases Ga concentration and reduces grain boundary scattering. The average transmittance of all deposited films is over 85%. Therefore, controlling the chamber pressure is a critical parameter in the characterization of GZO thin films and a valuable method for obtaining films with better characteristics.
Tài liệu tham khảo
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