Improved TEM samples of semiconductors prepared by a small‐angle cleavage technique

Microscopy Research and Technique - Tập 24 Số 2 - Trang 180-184 - 1993
J. P. McCaffrey1
1Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada

Tóm tắt

AbstractA small‐angle cleavage technique has been developed that produces superior transmission electron microscope (TEM) samples of semiconductors and related materials. The technique involves back‐thinning the sample to approximately 100 μm, then scribing a groove on this back face at a specified small angle to a standard cleavage plane. The sample is cleaved along this scribe line followed by cleaving along the standard cleavage plane to produce a thin wedged sample. Samples prepared by this method are characterized and compared with conventional and low‐angle ion milled samples. The technique is illustrated, and the characteristic geometry of the cleaved sample is explained in terms of a simplified cleavage model. © 1993 Wiley‐Liss, Inc.

Từ khóa


Tài liệu tham khảo

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Thông tin xuất bản

Microscopy Research and Technique

Tập 24 Số 2

180-184

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