Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

IEEE Transactions on Electron Devices - Tập 47 Số 7 - Trang 1440-1448 - 2000
Usha Gogineni1, John D. Cressler2, Guofu Niu2, D.L. Harame3
1Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, Aubum University, Auburn, AL, USA; IBM Microelectronics, VT, USA
2[Alabama Microelectronics Science and Technology Center Electrical Engineering Department, Aubum University, Auburn, AL, USA]
3IBM Microelectronics, VT, USA

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IEEE Transactions on Electron Devices

Tập 47 Số 7

1440-1448

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