Highly-ordered ripple structure induced by normal incidence sputtering on monocrystalline GaAs (001): ion energy and flux dependence
Tài liệu tham khảo
Baca, 2009
García, 2009, vol. 5
Chan, 2007, J. Appl. Phys., 101, 121301, 10.1063/1.2749198
Ehrlich, 1966, J. Chem. Phys., 44, 1039, 10.1063/1.1726787
Schwoebel, 1966, J. Appl. Phys., 37, 3682, 10.1063/1.1707904
Ou, 2013, Phys. Rev. Lett., 111, 016101, 10.1103/PhysRevLett.111.016101
Chowdhury, 2014, Vacuum, 107, 23, 10.1016/j.vacuum.2014.03.022
Chowdhury, 2015, Phys. Stat. Sol. (b), 252, 811, 10.1002/pssb.201451612
Ou, 2015, Nanoscale, 7, 18928, 10.1039/C5NR04297F
Apostolopoulos, 2000, Phys. Rev. Lett., 84, 3358, 10.1103/PhysRevLett.84.3358
Ballestad, 2002, Phys. Rev. B, 65, 205302, 10.1103/PhysRevB.65.205302
Salmi, 1999, Surf. Sci., 425, 31, 10.1016/S0039-6028(99)00180-6
Kim, 2003, Phys. Rev. B, 67, 045404, 10.1103/PhysRevB.67.045404
