Highly efficient silicon light emitting diodes produced by doping engineering
Tóm tắt
This paper reviews our recent progress on silicon (Si) pn junction light emitting diodes with locally doping engineered carrier potentials. Boron implanted Si diodes with dislocation loops have electroluminescence (EL) quantum efficiency up to 0.12%, which is two orders of magnitude higher than those without dislocations. Boron gettering along the strained dislocation lines produces locally p-type spike doping at the dislocations, which have potential wells for bounding spatially indirect excitons. Thermal dissociation of the bound excitons releases free carriers, leading to an anomalous increase of the band to band luminescence with increasing temperature. Si light emitting diodes with external quantum efficiency of 0.2% have been also demonstrated by implementation of pnpn modulation doping arrays.
Tài liệu tham khảo
Pavesi L. Will silicon be the photonic material of the third millenium? Journal of Physics: Condensed Matter, 2003, 15(26): R1169–R1196
Ennen H, Schneider J, Pomrenke G, Axmann A. 1.54-μm luminescence of erbium-implanted III–V semiconductors and silicon. Applied Physics Letters, 1983, 43(10): 943–945
Michel J, Benton J L, Ferrante R F, Jacobson D C, Eaglesham D J, Fitzgerald E A, Xie Y H, Poate J M, Kimerling L C. Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon. Journal of Applied Physics, 1991, 70(5): 2672–2678
Franzò G, Irrera A, Moreira E C, Miritello M, Iacona F, Sanfilippo D, Di Stefano G, Fallica P G, Priolo F. Electroluminescence of silicon nanocrystals in MOS structures. Applied Physics A: Materials Science & Processing, 2002, 74(1): 1–5
Pavesi L, Dal Negro L, Mazzoleni C, Franzò G, Priolo F. Optical gain in silicon nanocrystals. Nature, 2000, 408(6811): 440–444
Iacona F, Pacifici D, Irrera A, Miritello M, Franzò G, Priolo F, Sanfilippo D, Di Stefano G, Fallica P G. Electroluminescence at 1.54 μm in Er-doped Si nanoclustor-based devices. Applied Physics Letters, 2002, 81(17): 3242–3244
Rebohle L, Gebel T, Von Borany J, Skorupa W, Helm M, Pacifici D, Franzò G, Priolo F. Transient behavior of the strong violet electroluminescence of Ge-implanted SiO2 layers. Applied Physics B, Lasers and Optics, 2002, 74(1): 53–56
Sun J M, Skorupa W, Dekorsy T, Helm M. Efficient electroluminescence from rare-earth implanted SiO2 metal-oxide-semiconductor structures. In: 2nd IEEE International Conference on Group IV Photonics, 2005, 48–51
Ng W L, Lourenço M A, Gwilliam R M, Ledain S, Shao G, Homewood K P. An efficient room-temperature silicon-based light-emitting diode. Nature, 2001, 410(6825): 192–194
Sun J M, Dekorsy T, Skorupa W, Schmidt B, Helm M. Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes. Applied Physics Letters, 2003, 83(19): 3885–3887
Sun J. M, Dekorsy T, Skorupa, W, Schmidt B, Mücklich A, Helm M. Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes. Physical Review B, 2004, 70(15): 155316(1–11)
Solmi S, Landi E, Baruffaldi F. High-concentration boron diffusion in silicon: Simulation of the precipitation phenomena. Journal of Applied Physics, 1990, 68(7): 3250–3258
Bonafos C, Claverie A, Alquier D, Bergaud C, Martinez A, Laânab L, Mathiot D. The effect of the boron doping level on the thermal behaviour of end-of-range defects in silicon. Applied Physics Letters, 1997, 71(3): 365–367