High-power passively mode-locked semiconductor lasers
Tóm tắt
We have developed optically pumped passively mode-locked vertical-external-cavity surface-emitting lasers. We achieved as much as 950 mW of mode-locked average power in chirped 15-ps pulses, or 530 mW in 3.9-ps pulses with moderate chirp. Both lasers operate at a repetition rate of 6 GHz and have a diffraction-limited output beam near 950 nm. In continuous-wave operation, we demonstrate an average output power as high as 2.2 W. Device designs with a low thermal impedance and a smooth gain spectrum are the key to such performance. We discuss design and fabrication of the gain structures and, particularly, their thermal properties
Từ khóa
#Laser mode locking #Semiconductor lasers #Pump lasers #Surface emitting lasers #Chirp #Optical pulses #Optical pumping #Laser excitation #Vertical cavity surface emitting lasers #Optical diffractionTài liệu tham khảo
10.1109/68.874213
10.1364/OL.17.000505
10.1109/2944.571743
keller, 1999, semiconductor nonlinearities for solid-state laser modelocking and q-switching, Nonlinear Optics in Semiconductors, 59, 211, 10.1016/S0080-8784(08)62733-7
10.1063/1.106135
10.1017/CBO9780511628757.007
holm, 1999, mode-locked operation of a diode-pumped, external-cavity gaas/algaas surface emitting laser, Conf Lasers and Electro-Optics CLEO 99
10.1049/el:20010546
10.1109/CLEO.2002.1034369
10.1016/0030-4018(72)90225-8
10.1109/2944.686725
10.1109/CLEOE.2003.1312191
10.1109/68.324670
10.1109/68.605500
10.1109/68.481101
10.1364/JOSAB.19.000663
10.1109/2944.788419
10.1109/68.324671
10.1063/1.113786
10.1109/CLEO.2000.906772
10.1109/JQE.1975.1068922
10.1109/6144.846777
10.1007/BF02817701
morse, 1953, Methods of Theoretical Physics
10.1063/1.327598
adachi, 1993, properties of aluminum gallium arsenide, Emis Datareviews Series, 7, 323
10.1007/s003400000269