High-power laser structures grown on bulk GaN crystals

Journal of Crystal Growth - Tập 272 - Trang 274-277 - 2004
Pawel Prystawko1, Robert Czernetzki1,2, Lucy Gorczyca1,3, Grzegorz Targowski1, Przemek Wisniewski1, Piotr Perlin1, Marcin Zielinski4, Tadeusz Suski1, Mike Leszczynski1,2, Izabella Grzegory1,2, Sylwester Porowski1
1Unipress, High Pressure Research Center, PAS, Sokolowska 29/37, Warsaw 01-142, Poland
2TopGaN Ltd., Sokolowska 29/37, Warsaw 01-142, Poland
3University of Science and Technology, Material Sciences and Ceramics, Al Mickiewicza 30, Krakow, Poland
4University of Montpellier II, GES-CNRS, Case courrier 074, Montpellier 34095, France

Tài liệu tham khảo

Izabella Grzegory, 2001, J. Phys., 13, 6875 Prystawko, 2002, Phys. Stat. Sol. (a), 192, 320, 10.1002/1521-396X(200208)192:2<320::AID-PSSA320>3.0.CO;2-9 M. Sarzynski, et al., Special Issue of Physica Status Solidi, The Proceedings of EXMATEC04, in 2004. Ito, 2003, Phys. Stat. Sol. (a), 200, 131, 10.1002/pssa.200303345 Ikeda, 2004, Phys. Stat. Sol. (c), 1, 1461, 10.1002/pssc.200304086 Perlin, 2004, MRS Internet J. Nitride Semicond. Res., 9, 3, 10.1557/S1092578300000387 Goto, 2003, Phys. Stat. Sol. (a), 200, 122, 10.1002/pssa.200303325 Czernetzki, 2003, Phys. Stat. Sol. (a), 200, 9, 10.1002/pssa.200303293
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Journal of Crystal Growth

Tập 272

274-277

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