High performance HBV multipliers monolithically integrated onto a host quartz substrate

T. David1, S. Arscott1, J.-M. Munier2, T. Decoopman1, T. Akalin1, P. Mounaix3, X. Melique1, O. Vanbesien1, G. Beaudin2, D. Lippens1
1IEMN, Université de Lille, France
2Observatoire de Paris, LERMA, Paris, France
3CPMOH, Université de Bordeaux, Talence, France

Tóm tắt

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding to an overall efficiency of 6%. In addition we have observed a 45 GHz 3 dB bandwidth centered around 300 GHz for a constant input power of 70 mW. We also report on the design of a multiplier block in a fin line technology making use of smoothly corrugated tapered sections for mode matching and filtering.

Từ khóa

#Substrates #Frequency #Circuits #Diodes #Indium gallium arsenide #Varactors #Bandwidth #Matched filters #Filtering #Millimeter wave devices

Tài liệu tham khảo

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