High bandwidth small signal modulation response of two laterally mode-locked diode lasers

IEEE Photonics Technology Letters - Tập 14 Số 8 - Trang 1055-1057 - 2002
R. Acedo1, H. Lamela1, B. Roycroft1, G. Carpintero1, R. Santos1
1Optoelectronics and Laser Technology Group, Universidad슠Carlos III de Madrid, Madrid, Spain

Tóm tắt

In this letter, we present the study of the small signal modulation response of a monolithic twin ridge laterally coupled diode lasers. Such structures have been extensively theoretically studied for their promising characteristics as high-speed optical sources for optical communications, and in this work we demonstrate the increase of the small signal bandwidth beyond the relaxation oscillation frequency with the appearance of a second peak in the small signal response due to the laterally mode locking of these two emitters.

Từ khóa

#Bandwidth #Diode lasers #Frequency #Laser mode locking #Optical coupling #Semiconductor laser arrays #Optical modulation #Associate members #Optical fiber communication #Optical arrays

Tài liệu tham khảo

10.1049/el:19921221 10.1109/3.89995 10.1364/AO.30.002503 10.1109/2944.954130 roycroft, 2001, experimental characterization and analysis of the static behavior of twin-ridge algainas laterally coupled diode lasers, Physics and Simulation of Optoelectronic Devices IX SPIE, 4283, 310, 10.1117/12.432579 10.1016/0167-2789(94)90063-9 lau, 1990, narrow-band modulation of semiconductor lasers at millimeter wave frequencies (<formula><tex>${>}100$</tex></formula> ghz) by mode locking, IEEE Journal of Quantum Electronics, 26, 250, 10.1109/3.44956 lau, 1985, ultra-high speed semiconductor lasers, 1985 International Electron Devices Meeting, 644, 10.1109/IEDM.1985.191056