High air stability of threshold voltage on gate bias stress in pentacene TFTs with a hydroxyl-free and amorphous fluoropolymer as gate insulators

Organic Electronics - Tập 9 Số 4 - Trang 545-549 - 2008
Tokiyoshi Umeda1, Daisuke Kumaki2, Shizuo Tokito1
1NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
2Department of Electronic Chemistry Tokyo Institute of Technology 4259 Nagatsuta‐cho, Midori‐ku Yokohama 226‐8502 Japan

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Yagi, 2007, SID Symp. Digest, 38, 1753, 10.1889/1.2785666

Mizukami, 2006, IEEE Electron Device Lett., 27, 249, 10.1109/LED.2006.870413

Ong, 2004, J. Am. Chem. Soc., 126, 3378, 10.1021/ja039772w

Umeda, 2007, J. Appl. Phys., 101, 054517, 10.1063/1.2711780

Han, 2006, Appl. Phys. Lett., 88, 073519, 10.1063/1.2174876

Gu, 2007, J. Appl. Phys., 101, 014504, 10.1063/1.2403241

Goldmann, 2006, J. Appl. Phys., 99, 034507, 10.1063/1.2170421

Goldmann, 2006, Appl. Phys. Lett., 88, 063501, 10.1063/1.2171479

Chua, 2005, Nature, 434, 194, 10.1038/nature03376

Zhang, 2007, Appl. Phys. Lett., 91, 092114, 10.1063/1.2778472

Klauk, 2002, J. Appl. Phys., 92, 5259, 10.1063/1.1511826

Lim, 2007, Appl. Phys. Lett., 90, 173512, 10.1063/1.2733626

Veres, 2004, Chem. Mater., 16, 4543, 10.1021/cm049598q

Kalb, 2007, Appl. Phys. Lett., 90, 092104, 10.1063/1.2709894

Klauk, 2007, Nature, 445, 745, 10.1038/nature05533

Yang, 2006, Appl. Phys. Lett., 88, 173507, 10.1063/1.2199592

Kim, 2006, Appl. Phys. Lett., 89, 183516, 10.1063/1.2374864

Knipp, 2003, J. Appl. Phys., 93, 347, 10.1063/1.1525068

Gelinck, 2004, Nat. Mater., 3, 106, 10.1038/nmat1061

Salleo, 2005, Appl. Phys. Lett., 86, 263505, 10.1063/1.1968437

Libsch, 1993, Appl. Phys. Lett., 62, 1286, 10.1063/1.108709

Lee, 2007, IEEE Trans. Electron Devices, 54, 45, 10.1109/TED.2006.887220

Kumaki, 2008, Appl. Phys. Lett., 92, 093309, 10.1063/1.2890853