Kiến trúc g-C3N4/r-GO xốp bậc thang như vật liệu chứa lưu huỳnh nhẹ cho pin lithium-sulfur hiệu suất cao

Ionics - Tập 25 - Trang 5361-5371 - 2019
Ziwei Deng1, Qi Wang1, Peng Song1, Yuxi Chen1, Xiaohong Xia1, Hongbo Liu1
1Department of College of Material Science and Engineering, Hunan University, Changsha, China

Tóm tắt

Pin lithium-sulfur (Li-S) có mật độ năng lượng cao bị ảnh hưởng bởi tuổi thọ ngắn trong chu kỳ sạc, khả năng cung cấp dòng điện kém và hiệu suất sử dụng lưu huỳnh thấp. Trong bài báo này, chúng tôi báo cáo thiết kế và tổng hợp vật liệu g-C3N4/r-GO xốp bậc thang như vật liệu chứa lưu huỳnh nhẹ cho pin Li-S thông qua phương pháp ngưng tụ poly bằng cách sử dụng hạt nano silica làm khuôn cứng. Cấu trúc vi mô của kiến trúc g-C3N4/r-GO đã được xác định. Các đánh giá điện hóa cho thấy rằng catôt composite g-C3N4/r-GO/S với 75 wt% lưu huỳnh và mật độ lỗ lớn điều độ trong vật liệu chứa hiển thị những đặc tính lưu trữ lithium tốt nhất. Dung lượng đảo ngược đạt 589.6 mAh g−1 sau 100 chu kỳ ở tốc độ dòng điện 2 C (3.35 A g−1). Đặc biệt, khả năng cung cấp dòng điện rất xuất sắc. Ngay cả ở 3.5 C, dung lượng đảo ngược có thể đạt 55% dung lượng ở 0.2 C. Kiến trúc nhẹ g-C3N4/r-GO này bao gồm các lớp r-GO dẫn điện, g-C3N4 phân cực và các lỗ bậc thang là một vật liệu chứa lưu huỳnh hứa hẹn cho pin Li-S hiệu suất cao.

Từ khóa

#Pin lithium-sulfur #vật liệu chứa lưu huỳnh #g-C3N4 #graphene giảm #vi cấu trúc #hiệu suất điện hóa

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