HgCdTe MBE Technology: A Focus on Chemical Doping

Springer Science and Business Media LLC - 1994
O. K. Wu1
1Hughes Research Laboratories, Malibu, USA

Tóm tắt

AbstractHgCdTe MBE technology is becoming a mature growth technology for infrared focal plane array applications. The ability to dope HgCdTe with In(n-type) and As(p-type) dopants in-situ provides greater flexibilities for fabricating heterojunction devices. In this paper, we will first discuss the current status of HgCdTe MBE growth and then focus on the key results in the control of In(n-type) doping, various approaches and breakthroughs in the growth of As(p-type) doped HgCdTe and issues related to doping such as memory effects and dopants activation. In addition, device results from double layer heterojunction structure(DLHJ) will be briefly discussed.

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Tài liệu tham khảo

10.1016/0167-577X(89)90013-X

10.1063/1.105472

10.1016/0022-0248(90)90713-U

10.1116/1.577000

10.1103/PhysRev.134.A1073

Kamath, 1991, US Patent Number, 5, 028

10.1063/1.107039

10.1016/0022-0248(85)90143-5

10.1116/1.576199

10.1063/1.336212

10.1063/1.107109

13. Wu O. , Jamba D. and Kamath G. , J. Crystal Growth, to be published.

10.1116/1.575610

10.1116/1.577001

10.1117/12.56001

10.1116/1.586253

10.1063/1.108766

10.1016/0022-0248(82)90302-5

15. Korenstein R. , Hallock P. , Lee D. , Sullivan E. , Gedridge R. and Higa K. , The 1992 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials, Extended Abstract 117(1992)

10.1116/1.586265

Radford, 1984, IRIS Detector Specialty Conference

10.1016/0022-0248(90)90931-A

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