Hardness of submicrometre abrasive particles and polish rate measurements

Surface Engineering - Tập 15 Số 4 - Trang 324-328 - 1999
S. Ramarajan1, M. Hariharaputhiran1, S. V. Babu1
1The Department of Chemical Engineering Clarkson University, Potsdam, 13699–5705, NY, USA

Tóm tắt

Metal surfaces (copper and tantalum) and films (copper and tungsten) and silicon dioxide films were polished in deionised (DI) water using submicrometre sized alumina particles of varying density in benchtop Struers and Strasbaugh polishers. The polish rates for copper and tantalum in DI water increase significantly when the abrasive particle density exceeds a threshold value that correlates with the reported microhardness values of the (bulk) materials obtained using classical diamond pyramid microindentation measurements. Since it is expected that the density values are indicative of the particle hardness, this suggests, as might be expected, the existence of a threshold in the abrasive particle hardness for obtaining measurable polish rates. Based on this observation, the change in the relative hardness of thin films of copper exposed to two different chemical reagents in the chemical polishing of copper films was evaluated.

Từ khóa


Tài liệu tham khảo

10.1149/1.2085872

CHANG C. Y., 1996, VLSI technology’

KRISHNAN A., XIE C., KUMAR N., CURRY J., DUANE D., and MURARKA S. R: Proc. 9th Int. VLSI Multilevel Interconnect Conf., Santa Clara, CA, USA, February 1992, 226.

KAANTA C. W., 1991, Proc. 8th Int. IEEE VLSI Multilevel Interconnection Conf, 14, 4

LUO Q., 1997, ‘Chemical-mechanical polishing of thin copper films’, PhD thesis

STEIGERWALD J. M., 1995, ‘A fundamental study of chemical-mechanical polishing of copper thin films’, PhD thesis

10.1149/1.2043959

WEFERS K., 1987, Alcoa Technical Paper 19 (revised)

IVAN'KO A. A., 1971, ‘Handbook of hardness data’

10.1016/0022-3093(90)90200-6

10.1021/cm970168s

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Thông tin xuất bản

Surface Engineering

Tập 15 Số 4

324-328

Thông tin tác giả