Ảnh hưởng của khoảng cách vòng bảo vệ đến phản ứng bức xạ của đi-ốt lao động đơn photon

Buchner, A., Hadrath, S., Burkard, R., Kolb, F., Ruskowski, J., Ligges, M., Grabmaier, A.: Analytical evaluation of signal-to-noise ratios for avalanche- and single-photon avalanche diodes. J. Sens. 21(8), 2887 (2021). https://doi.org/10.3390/s21082887 Campajola, M., Di Capua, F., Fiore, D., Sarnelli, E., Aloisio, A.: Proton induced dark count rate degradation in 150-nm CMOS single-photon avalanche diodes. Nucl. Instrum. 947, 162722 (2019). https://doi.org/10.1016/j.nima.2019.162722 Ceccarelli, F., Acconcia, G., Gulinatti, A., Ghioni, M., Rech, I., Osellame, R.: Recent advances and future perspectives of single-photon avalanche diodes for quantum photonics applications. Adv. Quantum Technol. 4(2), 2000102 (2021). https://doi.org/10.1002/qute.202000102 Dalal, R.: Simulation of irradiated detectors. In: The 23rd International Workshop on Vertex Detectors, p. 030. Sissa Medialab (2015) Fatima, A., Whitelaw, J., Zickus, V., McGhee, E., Insall, R., Machesky, L., Faccio, D.: Enhanced-resolution fluorescence lifetime imaging from multiple sensor data fusion. COSI (2020). https://doi.org/10.1364/COSI.2020.CW1B.3 Garutti, E., Musienko, Y.: Radiation damage of SiPMs. Nucl. Instrum. 926, 69–84 (2019). https://doi.org/10.1016/j.nima.2018.10.191 Hsieh, C.-A., Tsai, C.-M., Tsui, B.-Y., Hsiao, B.-J., Lin, S.-D.: Photon-detection-probability simulation method for CMOS single-photon avalanche diodes. Sensors 20(2), 436 (2020). https://doi.org/10.3390/s20020436 Hurkx, G.A.: On the modelling of tunnelling currents in reverse-biased p–n junctions. Solid State Electron. 32(8), 665–668 (1989). https://doi.org/10.1016/0038-1101(89)90146-9 Hurkx, G.A., Klaassen, D.B., Knuvers, M.P.: A new recombination model for device simulation including tunneling. IEEE Trans. Electron. Dev. 39(2), 331–338 (1992). https://doi.org/10.1109/16.121690 Jouni, A., Malherbe, V., Mamdy, B., Thery, T., Sicre, M., Soussan, D., Goiffon, V.: Study of proton-induced defects in 40-nm CMOS SPADs. IEEE Trans. Nucl. Sci. (2023). https://doi.org/10.1109/TNS.2023.3257740 Kekkonen, J., Talala, T., Nissinen, J., Nissinen, I.: On the spectral quality of time-resolved CMOS SPAD-based Raman spectroscopy with high fluorescence backgrounds. IEEE Sens. J. 20(9), 4635–4645 (2020). https://doi.org/10.1109/JSEN.2020.2966119 Kimpton, D., Kerr, J.: A simple trap-detrap model for accurate prediction of radiation induced threshold voltage shifts in radiation tolerant oxides for all static or time variant oxide fields. Solid State Electron. 37(1), 153–158 (1994). https://doi.org/10.1016/0038-1101(94)90120-1 Liu, Q., Zhang, H., Hao, L., Hu, A., Wu, G., Guo, X.: Total dose test with γ-ray for silicon single photon avalanche diodes. Chin. Phys. B 29(8), 088501 (2020). https://doi.org/10.1088/1674-1056/ab9286 Madonini, F., Severini, F., Zappa, F., Villa, F.: Single photon avalanche diode arrays for quantum imaging and microscopy. Adv. Quantum Technol. 4(7), 2100005 (2021). https://doi.org/10.1002/qute.202100005 Morozzi, A., Moscatelli, F., Lombardi, G., Bilei, G.M., Hinger, V., Bergauer, T., Passeri, D.: Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation. JINST 15(1), C01029 (2020). https://doi.org/10.1088/1748-0221/15/01/C01029 Morrison, D., Kennedy, S., Delic, D., Yuce, M.R., Redouté, J.-M.: A 64 × 64 SPAD Flash LIDAR Sensor using a triple integration timing technique with 1.95 mm depth resolution. IEEE Sens. J. 21(10), 11361–11373 (2021). https://doi.org/10.1109/JSEN.2020.3030788 Najam, F., Yu, Y.S.: Compact trap-assisted-tunneling model for line tunneling field-effect-transistor Devices. Appl. Sci. 10(13), 4475 (2020). https://doi.org/10.3390/app10134475 Nolet F, Lemaire W, Dubois F, Roy N, Carrier S, Samson A, Pratte J-F (2020) A 256 pixelated SPAD readout ASIC with in-pixel TDC and embedded digital signal processing for uniformity and skew correction. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 949, 162891. Doi: 10.1016/j.nima.2019.162891 Ratti, L., Brogi, P., Collazuol, G., Dalla Betta, G.F., Ficorella, A., Marrocchesi, P.S., Vacchi, C.: Dark count rate distribution in neutron-irradiated CMOS SPADs. IEEE Trans. Electron. Dev. 66(12), 5230–5237 (2019). https://doi.org/10.1109/TED.2019.2944482 Ratti, L., Brogi, P., Collazuol, G., Dalla Betta, G.-F., Ficorella, A., Marrocchesi, P.S., Vacchi, C.: DCR performance in neutron-irradiated CMOS SPADs from 150- to 180-nm technologies. IEEE Trans. Nucl. Sci. 67(7), 1293–1301 (2020). https://doi.org/10.1109/TNS.2020.2978198 Shockley, W., Read, W.T.: Statistics of the recombinations of holes and electrons. Phys. Rev. 87(5), 835–842 (1952). https://doi.org/10.1103/PhysRev.87.835 Shojaee, F., Haddadifam, T., Karami, M.A.: Jitter modulation by photon wavelength variation in single-photon avalanche diodes (SPADs). Opt. Quantum Electron. 53, 1–10 (2021). https://doi.org/10.1007/s11082-021-02991-z Shojaee, F., Zarei, M., Ratti, L., Karami, M.A.: A new guard ring for ionizing radiation tolerance enhancement in single-photon avalanche diodes. Microelectron. Reliab. 135, 114573 (2022). https://doi.org/10.1016/j.microrel.2022.114573 Smith, J., Dhulla, V., Mukherjee, S., Lauenstein, J.-M., Hare, R., Zorn, C., Hostetler, C.: Evaluation of an operational concept for improving radiation tolerance of single-photon avalanche diode (SPAD) arrays. IEEE Trans. Nucl. Sci. 67(5), 797–804 (2020). https://doi.org/10.1109/TNS.2020.2979808 Yue, X., Ping, X., Xiaopeng, X., Yang, H.: A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectors. Semicond. Sci. Technol. 31(6), 065024 (2016). https://doi.org/10.1088/0268-1242/3 Zhang, L., Chan, M.: Tunneling Field Effect Transistor Technology. Springer International Publishing (2016)