Growth of thick MOD-derived CeO2−x buffer layer with less residual carbon for coated conductors

Journal of Materials Science: Materials in Electronics - Tập 26 - Trang 8949-8953 - 2015
H. Wang1,2, L. Y. Cao1, Y. Wang2, L. H. Jin2, J. Y. Liu2, J. F. Huang1, C. S. Li2, Z. M. Yu2, P. X. Zhang2
1Shaanxi University of Science and Technology, Xi’an, People’s Republic of China
2Northwest Institute for Nonferrous Metal Research, Xi’an, People’s Republic of China

Tóm tắt

120 nm thick CeO2−x buffer layer with less residual carbon has been prepared on biaxially textured NiW substrate using a newly developed heat-treatment route by a metal organic deposition approach. The thickness enhancement of CeO2−x buffer layer was achieved by multiple coatings. The residual carbon removal in CeO2−x buffer layer was realized by introducing CO2 into annealing atmosphere at the post-annealed step. Various characteristic methods, including X-ray diffraction, X-ray photoelectron spectra, emission scanning electron microscopy and atomic force microscopy analyses techniques have been applied to investigate the performance of CeO2−x film. The results show that thick high-quality textured CeO2−x film with smooth and crack-free surface has been produced at annealing temperature below 1000 °C. Furthermore, the atomic concentration of C in such thick CeO2−x buffer layer prepared using the post-annealed step by introducing CO2 into annealing atmosphere is obviously less than that in CeO2−x film fabricated in reducing atmosphere of Ar–4 % H2. In addition, the introduction of CO2 into post-annealing step is helpful to the decrease of oxygen vacancy defects in CeO2−x film, which can suppress the generation of cracks in film. It suggests that CeO2−x film fabricated by the newly developed heat-treatment route is proved to be a strong candidate as a buffer layer used for the further growth of the oxide film in coated conductors.

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Journal of Materials Science: Materials in Electronics

Tập 26

8949-8953

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