Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Frontiers of Optoelectronics - Tập 1 - Trang 147-150 - 2008
Zhizhen Ye1, Jingrui Wang1, Yazhen Wu1, Xincui Zhou1, Fugang Chen1, Weizhong Xu1, Yan Miao1, Jingyun Huang1, Jianguo Lü1, Liping Zhu1, Binghui Zhao1
1State Key Laboratory of Silicon Materials Zhejiang University Hangzhou China

Tóm tắt

Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O2, and P2O5 powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 Ω·cm, a hole concentration of 1.61 × 1018 cm−3, and a Hall mobility of 0.838 cm2·(V·s)−1 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the p-type characteristics of the films.

Tài liệu tham khảo

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