Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

IEEE Journal of Selected Topics in Quantum Electronics - Tập 7 Số 2 - Trang 135-142 - 2001
P G Eliseev1, H. Li1, T. Liu1, T.C. Newell1, L. F. Lester1, Kevin J. Malloy1
1Center for High Technology Materials, University of New Mexico, Albuquerque, NM, USA

Tóm tắt

Từ khóa


Tài liệu tham khảo

10.1070/QE2000v030n08ABEH001787

10.1109/JQE.1986.1073149

10.1063/1.116681

10.1063/1.117419

10.1103/PhysRevB.55.9740

asryan, 1996, inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser, Semicond Sci Technol, 11, 554, 10.1088/0268-1242/11/4/017

10.1088/0268-1242/14/1/020

10.1109/3.863959

10.1103/PhysRevB.54.11532

10.1103/PhysRevB.54.11548

10.1049/el:19940939

10.1049/el:19940082

10.1109/68.775303

10.1049/el:19990811

1987, Landolt-Boernstein Numerical Data and Functional Relationships in Science and Technology, 22, 118

10.1063/1.126944

10.1070/QE1984v014n01ABEH004653

10.1063/1.92959

10.1063/1.349706

10.1063/1.366876

10.1070/QE1998v028n03ABEH001173

10.1049/el:19971385