Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Moodera, J. S. et al. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Phys. Rev. Lett. 74, 3273–3276 (1995).

Miyazaki, T. & Tezuka, N. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction. J. Magn. Magn. Mater. 139, L231–234 (1995).

Wolf, S. A. et al. Spintronics: A spin-based electronics vision for the future. Science 294, 1488–1495 (2001).

Ney, A. Pampuch, C., Koch, R. & Ploog, K. H. Programmable computing with a single magnetoresistive element. Nature 425, 485–487 (2003).

Moodera, J. S. & LeClair, P. A quantum leap. Nature Mater. 2, 707–708 (2003).

Wang, D., Nordman, C., Daughton, J. M., Qian, Z. & Fink, J. 70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers. IEEE Trans. Magn. 40, 2269–2271 (2004).

Butler, W. H., Zhang X. -G., Schulthess, T. C. & Maclaren, J. M. Spin-dependent tunneling conductance of Fe/MgO/Fe sandwiches. Phys. Rev. B 63, 054416 (2001).

Mathon, J. & Umerski, A. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction. Phys. Rev. B 63, 220403R (2001).

Wulfhekel, W. et al. Single-crystal magnetotunnel junctions. Appl. Phys. Lett. 78, 509–511 (2001).

Bowen, M. et al. Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001). Appl. Phys. Lett. 79, 1655–1657 (2001).

Faure-Vincent, J. et al. High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions. Appl. Phys. Lett. 82, 4507–4509 (2003).

Mitani, S., Moriyama, T. & Takanashi, K. Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation. J. Appl. Phys. 93, 8041–8043 (2003).

Yuasa, S., Fukushima, A., Nagahama, T., Ando, K. & Suzuki, Y. High tunnel magnetoresistance at room temperature in fully epitaxial Fe/MgO/Fe tunnel junctions due to coherent spin-polarized tunneling. Jpn J. Appl. Phys. 43, L588–L590 (2004).

Yuasa, S. et al. Magnetic tunnel junctions with single-crystal electrodes: a crystal anisotropy of tunnel magneto-resistance. Europhys. Lett. 52, 344–350 (2000).

Simmons, J. G. Electric tunnel effect between dissimilar electrodes separated by a thin insulating film. J. Appl. Phys. 34, 2581–2590 (1963).

Gibson, A. & Haydock, R. Stability of vacancy defects in MgO: The role of charge neutrality. Phys. Rev. B 50, 2582–2592 (1994).

Saito, Y. et al. Correlation between barrier width, barrier height, and dc bias voltage dependences on the magnetoresistance ratio in Ir-Mn exchange biased single and double tunnel junctions. Jpn J. Appl. Phys. 39, L1035–L1038 (2000).

Vassent, J. L., Dynna, M., Marty, A., Gilles, B. & Patrat, G. A study on growth and the relaxation of elastic strain in MgO on Fe(001). J. Appl. Phys. 80, 5727–5735 (1996).

You, C. Y. & Bader, S. D. Prediction of switching/rotation of the magnetization direction with applied voltage in a controllable interlayer exchange coupled system. J. Magn. Magn. Mater. 195, 488–500 (1999).

Yu, J. H., Lee, H. M., Ando, Y. & Miyazaki, T. Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes. Appl. Phys. Lett. 82, 4735–4737 (2003).

Inaba, N. & Futamoto, M. Magnetic and crystallographic properties of Co-Cr-Pt longitudinal media prepared on MgO seedlayers deposited by ECR sputtering. IEEE Trans. Magn. 36, 2372–2374 (2000).

Yuasa, S., Nagahama, T. & Suzuki, Y. spin-polarized resonant tunneling in magnetic tunnel junctions. Science 297, 234–237 (2002).