Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization

Garcia, 2009, Giant tunnel electroresistance for non-destructive readout of ferroelectric states, Nature, 460, 81, 10.1038/nature08128 Wang, 2018, Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit, Nat. Commun., 9, 3319, 10.1038/s41467-018-05662-y Cheema, 2020, Enhanced ferroelectricity in ultrathin films grown directly on silicon, Nature, 580, 478, 10.1038/s41586-020-2208-x Chouprik, 2017, Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 fifilms on Si, Microelectron. Eng., 178, 250, 10.1016/j.mee.2017.05.028 Esaki, 1971, Polar switch, IBM Tech. Discl. Bull., 13, 2161 Chanthbouala, 2011, Solid-state memories based on ferroelectric tunnel junctions, Nat. Nanotechnol., 7, 101, 10.1038/nnano.2011.213 Wen, 2013, Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions, Nat. Mater., 12, 617, 10.1038/nmat3649 Li, 2019, Giant electroresistance in ferroionic tunnel junctions, iScience, 16, 368, 10.1016/j.isci.2019.05.043 Xi, 2017, Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier, Nat. Commun., 8, 10.1038/ncomms15217 Barrionuevo, 2016, Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field, Integ. Ferroelectr., 174, 174, 10.1080/10584587.2016.1196053 Luo, 2022, High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing, Nat. Commun., 13, 699, 10.1038/s41467-022-28303-x Ma, 2020, Sub-nanosecond memristor based on ferroelectric tunnel junction, Nat. Commun., 11, 1439, 10.1038/s41467-020-15249-1 Böscke, 2010, Ferroelectricity in hafnium oxide thin films, Appl. Phys. Lett., 99 Jiao, 2021, Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf0.5Zr0.5O2 barrier, Appl. Phys. Lett., 118, 10.1063/5.0053959 Prasad, 2021, Large tunnel electroresistance with ultrathin Hf0.5Zr0.5O2 ferroelectric tunnel barriers, Adv. Electron. Mater., 7, 10.1002/aelm.202001074 Xu, 2015, Ferroelectric polarization reversal via successive ferroelastic transitions, Nat. Mater., 14, 79, 10.1038/nmat4119 Peng, 2020, Constructing polymorphic nanodomains in BaTiO3 films via epitaxial symmetry engineering, Adv. Funct. Mater., 30, 10.1002/adfm.201910569 Brinkman, 1970, Tunneling conductance of asymmetrical barriers, J. Appl. Phys., 41, 1915, 10.1063/1.1659141 Jin Hu, 2016, Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions, Nat. Commun., 7, 10.1038/ncomms10808 Wen, 2020, Ferroelectric tunnel junctions: modulations on the potential barrier, Adv. Mater., 32, 10.1002/adma.201904123 Lee, 2021, Unveiling the origin of robust ferroelectricity in Sub-2 nm hafnium zirconium oxide films, ACS Appl. Mater. Interfaces, 13, 36499, 10.1021/acsami.1c08718 Hyuk Park, 2014, The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity, Appl. Phys. Lett., 104, 10.1063/1.4866008 Materlik, 2015, The origin of ferroelectricity in Hf1-xZrxO2: a computational investigation and a surface energy model, J. Appl. Phys., 117, 10.1063/1.4916707 Park, 2018, Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films, Nanoscale, 10, 716, 10.1039/C7NR06342C Zheng, 2021, In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase Bi, 2001, Synaptic modification BY correlated, Annu. Rev. Neurosci., 24, 139, 10.1146/annurev.neuro.24.1.139 Lee, 2020, Scale-free ferroelectricity induced by flat phonon bands in HfO2, Science, 369, 1343, 10.1126/science.aba0067 Cheema, 2022, Emergent ferroelectricity in subnanometer binary oxide films on silicon, Science, 376, 648, 10.1126/science.abm8642 Hazan, 2018, Bindsnet: a machine learning-oriented spiking neural networks library in python, Front. Neuroinform., 12, 89, 10.3389/fninf.2018.00089 Diehl, 2015, Unsupervised learning of digit recognition using spike-timing-dependent plasticity, Front. Comput. Neurosci., 9, 99, 10.3389/fncom.2015.00099 Estandía, 2020, Domain-matching epitaxy of ferroelectric Hf0.5Zr0.5O2 (111) on La2/3Sr1/3MnO3 (001), Cryst. Growth Des., 20, 3801, 10.1021/acs.cgd.0c00095 Wei, 2018, A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films, Nat. Mater., 17, 1095, 10.1038/s41563-018-0196-0