Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

Nature Materials - Tập 13 Số 12 - Trang 1091-1095 - 2014
Miguel M. Ugeda1, Aaron J. Bradley1, Su‐Fei Shi1, Felipe H. da Jornada2, Yi Zhang3, Diana Y. Qiu2, Wei Ruan4, Sung‐Kwan Mo5, Z. Hussain5, Zhi‐Xun Shen6, Feng Wang7, Steven G. Louie2, Michael F. Crommie7
11] Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA [2].
21] Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
31] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
41] Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA [2] State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
5Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
61] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA [2] Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
71] Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [3] Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.

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Tài liệu tham khảo

Mak, K. F. et al. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010).

Mak, K. F., He, K. L., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotech. 7, 494–498 (2012).

Zeng, H. L. et al. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotech. 7, 490–493 (2012).

Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 1882 (2012).

Jones, A. M. et al. Optical generation of excitonic valley coherence in monolayer WSe2 . Nature Nanotech. 8, 634–638 (2013).

Britnell, L. et al. Strong light–matter interactions in heterostructures of atomically thin films. Science 340, 1311–1314 (2013).

Mak, K. F. et al. Tightly bound trions in monolayer MoS2 . Nature Mater. 12, 207–211 (2013).

Zhang, Y. et al. Direct observation of the transition from indirect to direct band gap in atomically-thin epitaxial MoSe2 . Nature Nanotech. 9, 111–115 (2014).

Cheiwchanchamnangij, T. & Lambrecht, W. R. L. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 . Phys. Rev. B 85, 205302 (2012).

Ramasubramaniam, A. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides. Phys. Rev. B 86, 115409 (2012).

Komsa, H. P. & Krasheninnikov, A. V. Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2 from first principles. Phys. Rev. B 86, 241201 (2012).

Qiu, D. Y., da Jornada, F. H. & Louie, S. G. Optical spectrum of MoS2: Many-body effects and diversity of exciton states. Phys. Rev. Lett. 111, 216805 (2013).

Hybertsen, M. S. & Louie, S. G. Electron correlation in semiconductors and insulators: band-gaps and quasi-particle energies. Phys. Rev. B 34, 5390–5413 (1986).

Rohlfing, M. & Louie, S. G. Electron–hole excitations and optical spectra from first principles. Phys. Rev. B 62, 4927–4944 (2000).

Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147–150 (2011).

Bernardi, M., Palummo, M. & Grossman, J. C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664–3670 (2013).

Gutierrez, H. R. et al. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. Nano Lett. 13, 3447–3454 (2013).

Wang, F., Dukovic, G., Brus, L. E. & Heinz, T. F. The optical resonances in carbon nanotubes arise from excitons. Science 308, 838–841 (2005).

Scholes, G. D. & Rumbles, G. Excitons in nanoscale systems. Nature Mater. 5, 683–696 (2006).

Mallet, P. et al. Electron states of mono- and bilayer graphene on SiC probed by scanning-tunneling microscopy. Phys. Rev. B 76, 041403 (2007).

Hor, Y. S. et al. p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications. Phys. Rev. B 79, 195208 (2009).

Feenstra, R. M. & Stroscio, J. A. Tunneling spectroscopy of the GaAs(110) surface. J. Vac. Sci. Technol. B 5, 923–929 (1987).

Ross, J. S. et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nature Commun. 4, 2498 (2013).

Deslippe, J. et al. BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures. Comput. Phys. Commun. 183, 1269–1289 (2012).

Lischner, J., Vigil-Fowler, D. & Louie, S. G. Physical origin of satellites in photoemission of doped graphene: An ab Initio GW plus cumulant study. Phys. Rev. Lett. 110, 146801 (2013).

Helveg, S. et al. Atomic-scale structure of single-layer MoS2 nanoclusters. Phys. Rev. Lett. 84, 951–954 (2000).

Zhang, C. et al. Direct imaging of band profile in single layer MoS2 on graphite: Quasiparticle energy gap, metallic edge states, and edge band bending. Nano Lett. 14, 2443–2447 (2014).

Brar, V. W. et al. Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC. Appl. Phys. Lett. 91, 122102 (2007).

Mallet, P. et al. Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy. Phys. Rev. B 86, 045444 (2012).

Horcas, I. et al. WSXM: A software for scanning probe microscopy and a tool for nanotechnology. Rev. Sci. Instrum. 78, 013705 (2007).

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Nature Materials

Tập 13 Số 12

1091-1095

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