Giant Magnetoresistance Effect in the Square Networks with Regular Impurities
Tóm tắt
The magnetoresistance due to the disorder in the inhomogeneous systems can be studied using the classical model of resistor networks. In this work, the magnetoresistance of an inhomogeneous lattice is simulated using this model. The inhomogeneous network consists of two materials with different resistivity. Maxwell’s equations have been solved for a four-terminal resistor unit first, and then the system magnetoresistance is calculated based on the resistor network model. Results show that the magnetoresistance diverges for some configurations at a specific magnetic field that is promising for sensors applications. It is also exhibited that the magnetoresistance depends on the specific resistance ratios as well as the amount and alignment of the doped material.
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