GaSb/InGaAs quantum dot–well hybrid structure active regions in solar cells

Luque, 1997, Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels, Physical Review Letters, 78, 5014, 10.1103/PhysRevLett.78.5014 Shockley, 1961, Detailed balance limit of efficiency of p–n junction solar cells, Journal of Applied Physics, 32, 510, 10.1063/1.1736034 Shao, 2007, Intermediate-band solar cells based on quantum dot supracrystals, Applied Physics Letters, 91, 163503, 10.1063/1.2799172 Nika, 2007, Charge-carrier states and light absorption in ordered quantum dot superlattices, Physical Review B, 76, 125417, 10.1103/PhysRevB.76.125417 Martí, 2006, Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell, Physical Review Letters, 97, 247701, 10.1103/PhysRevLett.97.247701 Nazmul, 2012, Two-photon excitation in an intermediate band solar cell structure, Applied Physics Letters, 100, 172111, 10.1063/1.4709405 Martí, 2007, Emitter degradation in quantum dot intermediate band solar cells, Applied Physics Letters, 90, 10.1063/1.2747195 Willis, 2012, Defect mediated extraction in InAs/GaAs quantum dot solar cells, Solar Energy Materials and Solar Cells, 102, 142, 10.1016/j.solmat.2012.03.010 Bailey, 2012, Open-circuit voltage improvement of InAs/GaAs quantum-dot solar cells using reduced InAs coverage, IEEE Journal of Photovoltaics, 2, 269, 10.1109/JPHOTOV.2012.2189047 Guimard, 2010, Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage, Applied Physics Letters, 96, 10.1063/1.3427392 Okada, 2011, Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell, Journal of Applied Physics, 109, 024301, 10.1063/1.3533423 Sun, 1996, Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots, Applied Physics Letters, 68, 1543, 10.1063/1.115693 Liang, 2009, GaSb/GaAs type-II quantum dots grown by droplet epitaxy, Nanotechnology, 20, 455604, 10.1088/0957-4484/20/45/455604 Gu, 2009, Resistance to edge recombination in GaAs-based dots-in-a-well solar cells, Applied Physics Letters, 95, 10.1063/1.3277149 S.J. Polly, M.L. Harris, Z. Bittner, C.R. Plourde, C.G. Bailey, D.V. Forbes, S.M. Hubbard, Effect of cell size on GaAs concentrators with InAs quantum dots, in: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, 2010 pp. 2057–2061. Overwijk, 1993, Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam, Journal of Vacuum Science and Technology B, 11, 2021, 10.1116/1.586537 Jin, 2007, Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer, Applied Physics Letters, 91, 10.1063/1.2752778 Suzuki, 1999, Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy, Journal of Applied Physics, 85, 10.1063/1.370622 Ostinelli, 2006, Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures, Semiconductor Science and Technology, 21, 681, 10.1088/0268-1242/21/5/020 Alonso-Álvarez, 2007, Optical investigation of type-II GaSb/GaAs self-assembled quantum dots, Applied Physics Letters, 91, 10.1063/1.2827582 Laghumavarapu, 2007, Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers, Applied Physics Letters, 91, 10.1063/1.2816904 Hubbard, 2008, Effect of strain compensation on quantum dot enhanced GaAs solar cells, Applied Physics Letters, 92, 10.1063/1.2903699 Oshima, 2008, Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells, Applied Physics Letters, 93, 10.1063/1.2973398 Lu, 2011, Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells, Applied Physics Letters, 98, 10.1063/1.3586251 Tutu, 2012, Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer, Journal of Applied Physics, 111, 10.1063/1.3686184 Hubbard, 2009, Nanostructured photovoltaics for space power, Journal of Nanophotonics, 3, 10.1117/1.3266502 J.M. Woodall, H.J. Hovel, The effect of depletion region recombination currents on the efficiencies of Si and GaAs solar cells, in: Proceedings of the 10th IEEE Photovoltaic Specialists Conference, 1973 pp. 25–30. Levinshteĭn, 1996