GaN nanowire field emitters with the adsorption of Pt nanoparticles

RSC Advances - Tập 7 Số 36 - Trang 22441-22446
Zhen Cui1,2,3,4, Xizheng Ke1,2,3,4, Enling Li1,2,3,4, Taifei Zhao1,2,3,4, Qingping Qi1,2,3,4, Jie Yan1,2,3,4, Yingchun Ding5,6,7,8, Tong Liu9,10,11
1Republic of China
2School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, Republic of China
3Xi’an 710048
4Xi’an University of Technology
5Chengdu 610225
6Chengdu University of Information Technology
7College of Optoelectronics Technology, Chengdu University of Information Technology, Chengdu 610225, People's Republic of China
8People's Republic of China
9London E1 4NS
10Queen Mary University of London
11School of Physics & Astronomy, Queen Mary University of London, London E1 4NS, UK

Tóm tắt

We report Pt NP coated GaN NWs through CVD method and the fabrication of their field emitters.

Từ khóa


Tài liệu tham khảo

Zolper, 1996, Appl. Phys. Lett., 68, 2273, 10.1063/1.115882

Chen, 1996, Appl. Phys. Lett., 69, 794, 10.1063/1.117894

Ponce, 1997, Nature, 386, 351, 10.1038/386351a0

Johnson, 2002, Nat. Mater., 1, 106, 10.1038/nmat728

Yoshida, 2001, Jpn. J. Appl. Phys., 40, 1301, 10.1143/JJAP.40.L1301

Ng, 2007, Nanotechnology, 18, 375707, 10.1088/0957-4484/18/37/375707

Xiang, 2007, Appl. Phys. A, 87, 651, 10.1007/s00339-007-3887-y

Li, 2011, Appl. Surf. Sci., 257, 10850

Cui, 2014, Mater. Res. Bull., 56, 80, 10.1016/j.materresbull.2014.04.014

Cui, 2015, Ceram. Int., 41, 6074, 10.1016/j.ceramint.2015.01.066

Nabi, 2012, Mater. Lett., 66, 50, 10.1016/j.matlet.2011.08.049

Nabi, 2012, Mater. Chem. Phys., 133, 793, 10.1016/j.matchemphys.2012.01.095

Nabi, 2011, Appl. Surf. Sci., 257, 10289, 10.1016/j.apsusc.2011.07.043

Li, 2014, J. Electron. Mater., 43, 1379, 10.1007/s11664-014-3079-4

Li, 2015, Mater. Lett., 15, 426, 10.1016/j.matlet.2014.10.082

Fu, 2010, J. Phys. Chem. C, 114, 9627, 10.1021/jp100689s

Liu, 2005, Appl. Phys. Lett., 87, 073106, 10.1063/1.2011794

Yamashita, 2005, Appl. Phys. Lett., 86, 082109, 10.1063/1.1869549

Tang, 2009, Appl. Phys. Lett., 94, 3105

Tsai, 2013, IEEE Electron Device Lett., 34, 553, 10.1109/LED.2013.2247558

Li, 2016, Nanotechnology, 27, 265707, 10.1088/0957-4484/27/26/265707

Nabi, 2012, CrystEngComm, 14, 8492, 10.1039/c2ce25800e

Fowler, 1928, Proc. R. Soc. London, Ser. A, 119, 173, 10.1098/rspa.1928.0091

Liu, 2005, J. Phys. Chem. B, 109, 17082, 10.1021/jp052827r

Kresse, 1996, Comput. Mater. Sci., 6, 15, 10.1016/0927-0256(96)00008-0

Perdew, 1996, Phys. Rev. Lett., 77, 3865, 10.1103/PhysRevLett.77.3865

Cui, 2016, Mater. Des., 96, 409, 10.1016/j.matdes.2016.02.050

Schulz, 1977, Solid State Commun., 23, 815, 10.1016/0038-1098(77)90959-0

Carter, 2008, Phys. Rev. B: Condens. Matter Mater. Phys., 77, 115349, 10.1103/PhysRevB.77.115349

Kim, 2002, Phys. Rev. B: Condens. Matter Mater. Phys., 65, 165418, 10.1103/PhysRevB.65.165418

Buonocore, 2008, Nanotechnology, 19, 025711, 10.1088/0957-4484/19/02/025711

Wei, 2006, J. Phys. Chem. B, 110, 16346, 10.1021/jp063407k

Liu, 2007, Phys. Rev. B: Condens. Matter Mater. Phys., 75, 235322, 10.1103/PhysRevB.75.235322