GaN and Ga2O3-based wide bandgap semiconductor devices for emerging nanoelectronics

Springer Science and Business Media LLC - Tập 8 - Trang 105-110 - 2020
T. R. Lenka1
1Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Silchar, India

Tóm tắt

III-nitride wide bandgap semiconductors such as alloys of (Al, Ga, In) N play a vital role in high frequency, power electronics, and opto-nanoelectronics applications. Apart from this recently, wide bandgap semiconductor, β-Ga2O3 has attracted the attention of worldwide researchers as an alternative of GaN substrates due to its low-cost processing and wide availability of large scale wafers. Due to its suitable material properties, β-Ga2O3 can also be used for high frequency and high power electronics applications. In this paper the quantum transport in AlN/β-Ga2O3 based high electron mobility transistor (HEMT) along with the compact model development of GaN-based metal oxide semiconductor (MOS)-HEMT is presented for high frequency and high power electronics. Finally, the modeling and simulations of InGaN based nanowire is developed for solar photovoltaics and opto-nanoelectronics applications.

Tài liệu tham khảo

Amarnath G, Swain R, Lenka TR (2017) Modeling and Simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT. Int J Numer Modell Electron Netw Dev Fields 31(1):1–8. https://doi.org/10.1002/jnm.2268 Amarnath G, Lenka TR (2017) Analytical model development for unified 2D electron gas sheet charge density of AlInN/GaN MOSHEMT. Int J Electron Telecommun 63(4):363–368. https://doi.org/10.1515/eletel-2017-0049 Singh R, Lenka TR, Velpula RT, Quoc Thang BH, Nguyen HPT (2019) Investigation of E-mode beta-gallium oxide MOSFET for emerging nanoelectronics. In: 2019 IEEE 14th nanotechnology materials and devices conference (NMDC), Stockholm, Sweden, pp 1–5. doi: 10.1109/NMDC47361.2019.9084013 Singh R et al (2020) RF performance of ultra-wide bandgap HEMTs. In: Biswas A, Banerjee A, Acharyya A, Inokawa H, Roy J (eds) Emerging trends in terahertz solid-state physics and devices. Springer, Singapore Panda DK, Lenka TR (2017) Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT. AEU Int J Electron Commun 82:467–473 Panda DK, Lenka TR (2019) Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology. IET Micro Nano Lett. https://doi.org/10.1049/mnl.2018.5499 Panda D, Lenka TR (2018) A compact thermal noise model for enhancement mode N-polar MOS-HEMT including 2DEG density solution with two sub-bands. IET Circuits Dev Syst. https://doi.org/10.1049/iet-cds.2017.0226 Panda D, Amarnath G, Lenka TR (2018) Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison. J Semicond (IOP Science). https://doi.org/10.1088/1674-4926/39/7/000000 Panda D, Lenka TR (2019) Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT. Springer, NewYork Panda DK, Lenka TR (2017) Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT. Superlattices Microstruct 112:374–382 Amarnath G, Panda D, Lenka TR (2018) Modelling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths. Int J Numer Modell Electron Netw Dev Fields. https://doi.org/10.1002/jnm.2456 Amarnath G, Panda D, Lenka TR (2017) Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT. Int J RF Microw Comput Aided Eng 28(2):1–9. https://doi.org/10.1002/mmce.21179 Routray SR, Lenka TR (2018) InGaN-based solar cell: a wide solar spectrum harvesting technology for 21st century. CSIT 6:83–96. https://doi.org/10.1007/s40012-017-0181-9 Routray SR, Lenka TR (2017) Effect of metal-fingers/doped-ZnO transparent electrode on performance of GaN/InGaN solar cell. J Semicond (IOP Science) 38(9):092001 Routray SR, Lenka TR (2017) Performance analysis of nanodisk and core/shell/shell-nanowire type III-nitride heterojunction solar cell for efficient energy harvesting. Superlattices and microstructures. Elsevier, Amsterdam Routray SR, Lenka TR (2017) Spontaneous and piezo-phototronics effect on geometrical shape of III-nitride wurtzite nanowires for high efficiency photovoltaic applications. IET Micro Nano Lett 12:924–927 Routray SR, Shougaijam B, Lenka TR (2017) Exploiting polarization charge for high performance (000-1) facet GaN/InxGa1−xN based triangular nanowire solar cell. IEEE J Quantum Electron 53(5):1–8 Routray SR, Lenka TR (2018) Polarization charges in high performance GaN/InGaN core/shell multiple quantum well nanowire for solar energy harvesting. IEEE Trans Nanotechnol. https://doi.org/10.1109/TNANO.2018.2848 Routray SR, Lenka TR (2019) Effect of degree of strain relaxation on polarization charges of GaN/InGaN/GaN hexagonal and triangular nanowire. Solar cells solid-state electronics. Elsevier, Amsterdam. https://doi.org/10.1016/j.sse.2019.03.049