Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure

Waser, 2007, Nanoionics-based resistive switching memories, Nat. Mater., 6, 833, 10.1038/nmat2023 Simanjuntak, 2016, Status and prospects of ZnO-based resistive switching memory devices, Nanoscale Res. Lett., 11, 368, 10.1186/s11671-016-1570-y Sawa, 2008, Resistive switching in transition metal oxides, Mater. Today, 11, 28, 10.1016/S1369-7021(08)70119-6 Lee, 2011, A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures, Nat. Mater., 10, 625, 10.1038/nmat3070 Wong, 2012, Metal-oxide RRAM, Proc. IEEE, 100, 1951, 10.1109/JPROC.2012.2190369 Acharyya, 2013, Highly repeatable multilevel resistive switching characteristics of an Au/TiO2/Ti memory device, Semicond. Sci. Technol., 28, 125001, 10.1088/0268-1242/28/12/125001 Ielmini, 2016, Resistive switching memories based on metal oxides: mechanisms, reliability and scaling, Semicond. Sci. Technol., 31, 10.1088/0268-1242/31/6/063002 Khiat, 2016, High density crossbar arrays with sub-15nm single cells via liftoff process only, Sci. Rep., 6, 32614, 10.1038/srep32614 Choi, 2005, Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition, J. Appl. Phys., 98, 1, 10.1063/1.2001146 Jeon, 2006, First-principles modeling of resistance switching in perovskite oxide material, Appl. Phys. Lett., 89, 2004, 10.1063/1.2234840 Chanthbouala, 2012, A ferroelectric memristor, Nat. Mater., 11, 860, 10.1038/nmat3415 Scott, 2007, Nonvolatile memory elements based on organic materials, Adv. Mater., 19, 1452, 10.1002/adma.200602564 Raeis-Hosseini, 2016, Controlling the resistive switching behavior in starch-based flexible biomemristors, ACS Appl. Mater. Interfaces, 8, 7326, 10.1021/acsami.6b01559 Chen, 2015, Nonvolatile bio-memristor fabricated with egg albumen film, Sci. Rep., 5, 10022, 10.1038/srep10022 Valov, 2012, Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces, Nat. Mater., 11, 530, 10.1038/nmat3307 Wu, 2015, Stable self-compliance resistive switching in AlOδ/Ta2O5−x/TaOy triple layer devices, Nanotechnology, 26, 35203, 10.1088/0957-4484/26/3/035203 Yang, 2013, Oxide heterostructure resistive memory, Nano Lett., 13, 2908, 10.1021/nl401287w Chen, 2014, Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current, Appl. Phys. Lett., 104, 1 Lee, 2016, Memory window engineering of Ta2O5−x oxide-based resistive switches via incorporation of various insulating frames, Sci. Rep., 6, 1 Yoon, 2016, Uniform self-rectifying resistive switching behavior via preformed conducting paths in a vertical-type Ta2O5/HfO2, ACS Appl. Mater. Interfaces, 8, 2, 10.1021/acsami.6b05657 Hu, 2016, Resistive switching characteristics in manganese oxide and tantalum oxide devices, Microelectron. Eng., 160, 49, 10.1016/j.mee.2016.02.050 Abbas, 2017, Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices, J. Nanosci. Nanotechnol., 17, 7150, 10.1166/jnn.2017.14730 Hu, 2014, Resistive switching characteristics of manganese oxide nanoparticle assembly with crossbar arrays, J. Nanosci. Nanotechnol., 14, 8182, 10.1166/jnn.2014.9878 Hu, 2014, Bipolar resistive switching behavior in au/Pt–Fe2O3 core–shell nanoparticles assembly/Ti with 3×3 crossbar array structure, Microelectron. Eng., 127, 40, 10.1016/j.mee.2014.04.023 Kurnia, 2013, The evolution of conducting filaments in forming-free resistive switching Pt/TaOx/Pt structures, Appl. Phys. Lett., 102, 152902, 10.1063/1.4802263 Pan, 2011, Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature, Appl. Phys. Lett., 99, 113509, 10.1063/1.3638490 Abbas, 2017, A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications, Semicond. Sci. Technol., 32, 10.1088/1361-6641/aa6a3a Truong, 2016, Ta2O-memristor synaptic array with winner-take-all method for neuromorphic pattern matching, J. Korean Phys. Soc., 69, 640, 10.3938/jkps.69.640 Dean, 1998 Lai, 1999, Leakage current mechanism of metal–Ta2O5–metal capacitors for memory device applications, J. Electrochem. Soc., 146, 266, 10.1149/1.1391597 Gutsev, 2000, Experimental and theoretical study of the photoelectron spectra of MnO−x (X=1–3) cluster, J. Chem. Phys., 113, 1473, 10.1063/1.481964 Chiu, 2014, A review on conduction mechanisms in dielectric films, Adv. Mater. Sci. Eng., 2014, 10.1155/2014/578168