Formation of masking pattern by electron beam-induced vapor deposition
Tóm tắt
The dry resist-free process of electron beam-induced masking via chemical vapor deposition from a hydrocarbon precursor was studied. It was shown that the obtained mask exhibited a low selectivity during ion beam etching with SF6 ions. It was found that, during mask deposition, a thin (of the order of 1 nm) boundary layer is formed on the SiO2 plate surface; the layer had a substantially higher plasma resistance and, hence, high selectivity upon ion beam etching of SiO2. Certain features of the masking process and the properties of the mask material were studied.
Tài liệu tham khảo
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