Focused electron beam deposited silicon dioxide derivatives for nano-electronic applications

Utke, 2012 van Dorp, 2008, A critical literature review of focused electron beam induced deposition, J. Appl. Phys., 104, 10.1063/1.2977587 Barth, 2020, Precursors for direct-write nanofabrication with electrons, J. Mater. Chem. C, 8, 15884, 10.1039/D0TC03689G Koops, 1995, Fabrication and characterization of platinum nanocrystalline material grown by electron-beam induced deposition, J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process., Meas., Phenom., 13, 2400, 10.1116/1.588008 Masteghin, 2021, The role of surface stoichiometry in NO2 gas sensing using single and multiple nanobelts of tin oxide, Phys. Chem. Chem. Phys., 23, 9733, 10.1039/D1CP00662B Vaz, 2008, Platinum thin films deposited on silicon oxide by focused ion beam: Characterization and application, J. Mater. Sci., 43, 3429, 10.1007/s10853-007-2402-3 Teresa, 2009, Origin of the difference in the resistivity of as-grown focused-ion- and focused-electron-beam-induced pt nanodeposits, J. Nanomater., 2009, 10.1155/2009/936863 Serrano-Ramón, 2011, Ultrasmall functional ferromagnetic nanostructures grown by focused electron-beam-induced deposition, ACS Nano, 5, 7781, 10.1021/nn201517r Fernández-Pacheco, 2013, Three dimensional magnetic nanowires grown by focused electron-beam induced deposition, Sci. Rep., 3, 1492, 10.1038/srep01492 Kohlmann-von Platen, 1992, Electron-beam induced tungsten deposition: Growth rate enhancement and applications in microelectronics, J. Vac. Sci. Technol. B, 10, 2690, 10.1116/1.586027 Bell, 1994, Electron beam-induced deposition of tungsten, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. Process., Meas. Phenom., 12, 2976, 10.1116/1.587545 Lipp, 1996, Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. Process., Meas. Phenom., 14, 3920, 10.1116/1.588695 Bret, 2005, Characterization of focused electron beam induced carbon deposits from organic precursors, Microelectron. Eng., 78–79, 300, 10.1016/j.mee.2005.01.006 Riazanova, 2014, Gas-assisted electron-beam-induced nanopatterning of high-quality si-based insulator, Nanotechnology, 25, 10.1088/0957-4484/25/15/155301 Utke, 2008, Gas-assisted focused electron beam and ion beam processing and fabrication, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct., 26, 1197, 10.1116/1.2955728 Tseng, 2005, Recent developments in nanofabrication using focused ion beams, Small, 1, 924, 10.1002/smll.200500113 A. Perentes, P. Hoffmann, Focused Electron Beam Induced Deposition of Si-Based Materials From SiOxCy to Stoichiometric SiO2: Chemical Compositions, Chemical-Etch Rates, and Deep Ultraviolet Optical Transmissions, Chem. Vapor Depos. 13 (4) 176–184. Wanzenboeck, 2006, Custom design of optical-grade thin films of silicon oxide by direct-write electron-beam-induced deposition, J. Vac. Sci. Technol. B, 24, 2755, 10.1116/1.2393245 Masteghin, 2018, A gas sensor based on a single SnO micro-disk, Sensors, 18, 3229, 10.3390/s18103229 Randolph, 2006, Focused, nanoscale electron-beam-induced deposition and etching, Crit. Rev. Solid State Mater. Sci., 31, 55, 10.1080/10408430600930438 Pablo-Navarro, 2017, Tuning shape, composition and magnetization of 3D cobalt nanowires grown by focused electron beam induced deposition (FEBID), J. Phys. D: Appl. Phys., 50, 18LT01, 10.1088/1361-6463/aa63b4 Schmied, 2015, Fundamental edge broadening effects during focused electron beam induced nanosynthesis, Beilstein J. Nanotechnol., 6, 462, 10.3762/bjnano.6.47 Warring, 2016, Surficial siloxane-to-silanol interconversion during room-temperature hydration/dehydration of amorphous silica films observed by ATR-IR and TIR-Raman spectroscopy, Langmuir, 32, 1568, 10.1021/acs.langmuir.5b04506 Borowicz, 2013, Raman Spectra of high-κ dielectric layers investigated with micro-Raman spectroscopy comparison with silicon dioxide, Sci. World J., 2013, 10.1155/2013/208081 Borowicz, 2012, Deep-ultraviolet Raman investigation of silicon oxide: Thin film on silicon substrate versus bulk material, Adv. Nat. Sci.: Nanosci. Nanotechnol., 3 Buscarino, 2009, Variability of the si-o-si angle in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy, J. Non-Cryst. Solids, 355, 1092, 10.1016/j.jnoncrysol.2008.12.017 Moore, 2003, Study of structure and quality of different silicon oxides using FTIR and Raman microscopy, Opto-Ireland 2002: Opt. Photonics Technol. Appl., 4876, 1247 Ferrari, 2002, Determination of bonding in diamond-like carbon by Raman spectroscopy, Diam. Relat. Mater., 11, 1053, 10.1016/S0925-9635(01)00730-0 Ferrari, 2004, Raman Spectroscopy of amorphous, nanosctructed, diamond-like carbon and nanodiamond, Philos. Trans. R. Soc. Lond. A Math. Phys. Eng. Sci., 362, 2477, 10.1098/rsta.2004.1452 Lau, 2010, Electron-beam-induced carbon contamination on silicon: Characterization using raman spectroscopy and atomic force microscopy, Microsc. Microanal., 16, 13, 10.1017/S1431927609991206 Abbas, 2004, A study of ta-C, a-C:H and Si-a:C:H thin films on polymer substrates as a gas barrier, Diam. Relat. Mater., 13, 1342, 10.1016/j.diamond.2003.10.084 Barth, 2020, Precursors for direct-write nanofabrication with electrons, J. Mater. Chem. C, 8, 15884, 10.1039/D0TC03689G Moncrieff, 1978, Secondary electron emission in the scanning electron microscope, Scanning, 1, 195, 10.1002/sca.4950010307 Bartzsch, 2009, Electrical insulation properties of sputter-deposited SiO 2 Si 3N 4 and Al 2O 3 films at room temperature and 400 C, Phys. Status Solidi (A) Appl. Mater. Sci., 206, 514, 10.1002/pssa.200880481 Suyama, 1987, Electrical conduction and dielectric breakdown in sputter-deposited silicon dioxide films on silicon, J. Appl. Phys., 62, 2360, 10.1063/1.339495 Campbell, 1997, Electrical and chemical characterization of FIB-deposited insulators, 223 Edinger, 1998, Study of precursor gases for focused ion beam insulator deposition, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct., 16, 3311, 10.1116/1.590497 Jun, 2005, Characterisation of reactively sputtered silicon oxide for thin-film transistor fabrication, Electron. Lett., 41, 40, 10.1049/el:20051045